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V1P22www.
vishay.
comVishayGeneralSemiconductorRevision:03-Aug-20201DocumentNumber:86535Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Surface-MountTMBS(TrenchMOSBarrierSchottky)RectifierLINKSTOADDITIONALRESOURCESFEATURESVerylowprofile-typicalheightof0.
65mmTrenchMOSSchottkytechnologyLowforwardvoltagedropLowpowerloss,highefficiencyMeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°CAEC-Q101qualifiedavailable-Automotiveorderingcode:baseP/NHM3Materialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912TYPICALAPPLICATIONSForuseinlowvoltagehighfrequencyinverters,freewheeling,DC/DCconverters,andpolarityprotectionapplications,incommercial,industrial,andautomotiveapplications.
MECHANICALDATACase:MicroSMP(DO-219AD)MoldingcompoundmeetsUL94V-0flammabilityratingBaseP/N-M3-halogen-free,andRoHS-compliantBaseP/NHM3-halogen-free,RoHS-compliant,andAEC-Q101qualifiedTerminals:mattetinplatedleads,solderableperJ-STD-002andJESD22-B102M3andHM3suffixmeetsJESD201class2whiskertestPolarity:colorbanddenotesthecathodeendNotes(1)Freeairmountedonrecommendedcopperpadarea(2)Theheatgeneratedmustbelessthanthethermalconductivityfromjunctiontoambient:dPD/dTJ<1/RJAPRIMARYCHARACTERISTICSIF(AV)1.
0AVRRM200VIFSM25AVFatIF=1.
0A(125°C)0.
65VTJmax.
175°CPackageMicroSMP(DO-219AD)CircuitconfigurationSingleMicroSMP(DO-219AD)eSMPSeriesTopViewBottomViewAKCathodeAnode333DDD3D3DModelsAvailableMAXIMUMRATINGS(TA=25°Cunlessotherwisenoted)PARAMETERSYMBOLV1P22UNITDevicemarkingcodeV1DMaximumrepetitivepeakreversevoltageVRRM200VMaximumDCreversevoltageVDC160VMaximumaverageforwardrectifiedcurrentIF(AV)(1)1.
0APeakforwardsurgecurrent10mssinglehalfsine-wavesuperimposedonratedloadIFSM25AOperatingjunctiontemperaturerangeTJ(2)-40to+175°CStoragetemperaturerangeTSTG-55to+175°CV1P22www.
vishay.
comVishayGeneralSemiconductorRevision:03-Aug-20202DocumentNumber:86535Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
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comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Notes(1)Pulsetest:300μspulsewidth,1%dutycycle(2)Pulsetest:pulsewidth5msNotes(1)Theheatgeneratedmustbelessthanthethermalconductivityfromjunction-to-ambient:dPD/dTJ<1/RJA(2)Freeair,mountedonrecommendedcopperpadarea;thermalresistance,RJA-junctiontoambient(3)Mountedonrecommendedcopperpadarea;thermalresistance,RJM-junctiontomountNote(1)AEC-Q101qualifiedELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)PARAMETERTESTCONDITIONSSYMBOLTYP.
MAX.
UNITInstantaneousforwardvoltageIF=0.
5ATA=25°CVF(1)0.
74-VIF=1.
0A0.
800.
88IF=0.
5ATA=125°C0.
58-IF=1.
0A0.
650.
73ReversecurrentVR=160VTA=25°CIR(2)0.
001-mATA=125°C0.
1-VR=200VTA=25°C-0.
015TA=125°C0.
21.
0Typicaljunctioncapacitance4.
0V,1MHzCJ50.
0-pFTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)PARAMETERSYMBOLV1P22UNITTypicalthermalresistanceRJA(1)(2)130°C/WRJM(3)20ORDERINGINFORMATION(Example)PREFERREDP/NUNITWEIGHT(g)PREFERREDPACKAGECODEBASEQUANTITYDELIVERYMODEV1P22-M3/H0.
006H45007"diameterplastictapeandreelV1P22HM3/H(1)0.
006H45007"diameterplastictapeandreelV1P22www.
vishay.
comVishayGeneralSemiconductorRevision:03-Aug-20203DocumentNumber:86535Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
com,DiodesEurope@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000RATINGSANDCHARACTERISTICSCURVES(TA=25°Cunlessotherwisenoted)Fig.
1-MaximumForwardCurrentDeratingCurveFig.
2-AveragePowerLossCharacteristicsFig.
3-TypicalInstantaneousForwardCharacteristicsFig.
4-TypicalReverseLeakageCharacteristicsFig.
5-TypicalJunctionCapacitanceFig.
6-TypicalTransientThermalImpedance1010010001000000.
20.
40.
60.
811.
20255075100125150175AxisTitle1stline2ndlineAverageForwardRectifiedCurrent(A)MountTemperature(°C)TMmeasuredatcathodeterminalmounttypicalvaluesRthJM=20.
0°C/WRthJA=130°C/W1010010001000000.
20.
40.
60.
81.
000.
20.
40.
60.
811.
2AxisTitle1stline2ndlineAveragePowerLoss(W)AverageForwardCurrent(A)D=0.
1D=0.
2D=0.
3D=1.
0D=tp/TTtpD=0.
8D=0.
5101001000100000.
111000.
20.
40.
60.
81.
01.
21.
41.
61.
82.
02.
2AxisTitle2ndlineInstantaneousForwardCurrent(A)InstantaneousForwardVoltage(V)TJ=100°CTJ=125°CTJ=150°CTJ=-40°CTJ=25°CTJ=175°C101001000100000.
0000010.
000010.
00010.
0010.
010.
111020406080100AxisTitle1stline2ndlineInstantaneousReverseCurrent(mA)PercentofRatedPeakReverseVoltage(%)TJ=150°CTJ=125°CTJ=100°CTJ=-40°CTJ=25°CTJ=175°C1010010001000011010010000.
11101001000AxisTitle1stline2ndlineJunctionCapacitance(pF)ReverseVoltage(V)TJ=25°Cf=1.
0MHzVsig=50mVp-p1010010001000011010010000.
010.
1110100AxisTitle1stline2ndlineTransientThermalImpedance(°C/W)t-PulseDuration(s)JunctiontoambientV1P22www.
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comVishayGeneralSemiconductorRevision:03-Aug-20204DocumentNumber:86535Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEOUTLINEDIMENSIONSininches(millimeters)0.
106(2.
70)0.
091(2.
30)0.
055(1.
40)0.
047(1.
20)CathodeBandMicroSMP(DO-219AD)0.
030(0.
75)0.
022(0.
55)0.
030(0.
75)0.
022(0.
55)0.
059(1.
50)0.
043(1.
10)0.
039(0.
98)0.
031(0.
78)0.
091(2.
30)0.
083(2.
10)0.
020(0.
50)0.
043(1.
10)0.
011(0.
27)0.
005(0.
12)0.
079(2.
00)0.
032(0.
80)0.
032(0.
80)MountingPadLayout0.
029(0.
73)0.
025(0.
63)LegalDisclaimerNoticewww.
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