charge65jjj.cn

1.
Gate2.
Drain3.
SourcePinDefinition:Table1AbsoluteMaximumRatings(TC=25°C,unlessotherwisespecified)BlockDiagramCase:TO-220,ITO-220,TO-263PackageParameterSymbolUnitDrain-SourceVoltageVDS650VGate-SourceVoltageVGS±30VContinuousDrainCurrentID11APulsedDrainCurrent(Note1)IDM42ASinglePulseAvalancheEnergy(Note2)260mJPowerDissipationPDW151°CTJ/TSTG-55~+150SJ11N65Series650VN-ChannelSuperJunctionPowerMOSFETRSEMICONDUCTORTO-220123SJ11N65ITO-220SJ11N65FSJ11N65DTO-263132GenaralDescriptionMechanicalDataOrderingInformationPartNo.
PackageTypePackageSJ11N65TO-220SJ11N65FITO-220Quality(box)JINANJINGHENGELECTRONICSCO.
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CNSJ11N65DTO-263TubeTC=25°CTubeTape&Reel10001000800DSG2TC=25°CTC=100°C7SJ11N65SJ11N65DSJ11N65F35VDSRDS(on)(Ω)TypID(A)Qg(Typ)ProductSummary650V0.
38@10V1132ncThisseriesofpowerMOSFETuseNchannelTrenchSuper-Junctiontechnologyanddesigntoprovidebettercharacteristics,suchasfastswitchingtime,lowCissandCrss,lowonresistanceandexcellentavalanchecharacteristics,makingitespeciallysuitableforapplicationswhichrequiresuperiorpowerdensityandoutstandingefficiency.
FeaturesLowon-resistanceUltralowgatechargeandinputcapacitance100%avalanchetestedRohscompliantApplicationSwitchingapplicationsJFSJ11N65123JFSJ11N65FJFSJ11N65DEASAvalancheCurrent(Note1)IARA2RepetitiveAvalancheEnergy(Note1)EARmJ1ReverseDiodeRecoverydv/dt(Note3)dv/dt15V/nsDrainSourceVoltageSlope(VDS=480V)dv/dtV/ns50OperatingJunctionandStorageTemperatureTable2.
ThermalCharacteristicsTable3.
ElectricalCharacteristics(TJ=25°C,unlessotherwisespecified)ParameterSymbolUnitThermalresistanceJunctiontoAmbientRθJA62°C/WParameterSymbolOffCharacteristicsDrain-SourceBreakdownVoltageBVDSS650VDrain-SourceLeakageCurrentIDSS1μAGate-SourceLeakageCurrentForward100nAReverse-100nAOnCharacteristics(Note4)GateThresholdVoltageVGS(TH)StaticDrain-SourceOn-StateResistance0.
380.
42DynamicCharacteristics(Note5)InputCapacitanceCISS720pFOutputCapacitanceCOSSpF20ReverseTransferCapacitanceCRSS1.
5pFSwitchingCharacteristics(Note5)Turn-OnDelayTimetd(on)15nsTurn-OnRiseTimetRns10Turn-OffDelayTime110nsTurn-OffFallTimetf9nsTotalGateChargeQG32nCGate-SourceChargeQGSnC4Gate-DrainChargeQGD16nCDrain-SourceDiodeCharacteristicsandMaximumRatingsDrain-SourceDiodeForwardVoltageVSD1.
5VMaximumContinuousDrain-SourceDiodeForwardCurrentIS9.
2AISMAReverseRecoveryTimetrr280nsReverseRecoveryChargeQRRnC3300TestConditionsUnitMaxTypMinVGS=0V,ID=250μAVDS=650V,VGS=0VVGS=30V,VDS=0VVGS=-30V,VDS=0VVDS=VGS,ID=250μAVGS=10V,ID=5.
5AVDS=25V,VGS=0V,f=1MHzVDD=400V,ID=5.
5A,RG=20ΩVDS=400V,ID=5.
5A,VGS=10VVGS=0V,IS=5.
5AVGS=0V,IS=5.
5AdIF/dt=100A/μs(Note1)2.
54.
5VΩSJ11N65Series0.
9MaximumPulsedDrain-SourceDiodeForwardCurrent30SJ11N65SJ11N65DSJ11N65FThermalresistanceJunctiontoCaseRθJc°C/W801.
24.
1IGSSRDS(ON)td(off)JINANJINGHENGELECTRONICSCO.
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CNNotes:1RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature2=mH,IL60AS=3A,VDD=150V,StartingTJ=25°C3ISD≤4.
5A,di/dt≤200A/μS,VDD≤BVDSS,startingT=℃J254PulseTest:Pulsewidth≤300μS,Dutycycle≤2%5Guaranteedbydesign,notsubjecttoproductionRSEMICONDUCTORTypicalCharacteristicsDiagramsJINANJINGHENGELECTRONICSCO.
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CN9-302550751001250204060Fig1.
PowerDissipationCaseTemperature(C)Powerdissipation(w)15080100TO-220,TO-2630255075100125051015Fig2.
PowerDissipationCaseTemperature(C)Powerdissipation(w)1502025ITO-22030350.
000010.
00010.
0010.
010.
11010.
010.
1110Fig3.
MaximumEffectiveThermalImpendanceSquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedanceDuty=0.
5Duty=0.
2Duty=0.
1Duty=0.
05Duty=0.
02Duty=0.
01SinglePDMt1t2Notes:Duty=t/t12T=T+P*Z*RjCDMθJCθJCSINGLEPULSER=1.
2℃/WθJCFig4.
SafeOperationArea0.
010.
11101000.
11.
0101001000DC10ms1ms100μs10μsI-DrainCurrent(A)DVDrain-sourceVoltage(V)DSRDS(ON)LimitedSinglepulseT=25℃AT=150℃J(MAX)TO-220,TO-263Fig5.
SafeOperationAreaITO-2201μs0.
010.
11101000.
11.
0101001000DC10ms1ms100μs10μsI-DrainCurrent(A)DVDrain-sourceVoltage(V)DSRDS(ON)LimitedSinglepulseT=25℃AT=150℃J(MAX)1μsSJ11N65SeriesRSEMICONDUCTORTypicalCharacteristicsDiagramsJINANJINGHENGELECTRONICSCO.
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CN9-4051015200101520Fig6.
OutputCharacteristicsVDS(V)Drain-SourceVoltage(V)IDDrainCurrent(A)5253020V10V8V7V6V5.
5V5V4.
5VNormalizedon-Resistance(Ω)0.
20.
40.
60.
811.
2Fig8.
Drain-SourceonResistanceTj-JunctionTemperature(℃)-20-6020601001400Fig9.
TransferCharacteristics0246810355101520VGSGate-SourceVoltage(V)IDDrainCurrent(A)0253002345Fig10.
CossstoredenergyEoSS(μj)0100200300400500600VDSDrain-SourceVoltage(V)1Fig11.
ForwardCharacteristicsofReversediodeIS(A)VsdSource-DrainVoltage(V)00.
511.
51101000.
1Rdsonon-Resistance(Ω)00.
20.
40.
60.
81.
0Fig7.
Drain-SourceonResistanceID-DainCurrent(A)501015202530VGS=10V25℃150℃SJ11N65SeriesRSEMICONDUCTORTypicalCharacteristicsDiagramsJINANJINGHENGELECTRONICSCO.
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CN9-5Capacitance(pF)Fig12.
CapacitanceCharacteristicsVDSDrain-SourceVoltage(V)01501752002252500510152025VgsGate-sourceVoltage(V)Fig13.
GateChargeQgGateCharge(nC)3035255075100125120V480VFig14.
AvalancheenergyEAS(mj)Tj-JunctionTemperature(℃)255075100125150175Fig15.
Drain-sourcebreakdownvoltageBVDSS(Normalized)(V)Tj-JunctionTemperature(℃)0100200300400500600067891012345010110210310410CissCossCrssSJ11N65SeriesRSEMICONDUCTOR0.
91.
01.
1-500-25501001502575125VGS=0VID=250μATypicalTestCircuitJINANJINGHENGELECTRONICSCO.
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CN9-6SJ11N65SeriesRSEMICONDUCTORProductNamesRulesRatedCodeWith2Digital,ForExample:600V:6060V:06SpecialFunctionCodeG-SESDProtection:ENoProtection:DefaultPackageCodeTO-220:DefaultITO-220:FRatedCurrentCodeWith1-2Digital,ForExample:4A:4,10A:10,0.
8A:08ChannelCodeNchannel:NPchannel:PXXNEXXXTO-262:ETO-263:DTO-252:MTO-251:NTO-3P:KXProcessType:VDMOS:defaultSuperjunction:SJLowVoltagetrench:DTypicalTestCircuitAndWaveform(continues)JINANJINGHENGELECTRONICSCO.
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CN9-7SJ11N65SeriesRSEMICONDUCTORDimensionsJINANJINGHENGELECTRONICSCO.
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CN9-8SJ11N65SeriesRSEMICONDUCTORDimensionsJINANJINGHENGELECTRONICSCO.
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CN9-9SJ11N65SeriesRSEMICONDUCTOR