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SemiconductorComponentsIndustries,LLC,2016September,2016Rev.
201PublicationOrderNumber:MJD44H11/DMJD44H11(NPN),MJD45H11(PNP)ComplementaryPowerTransistorsDPAKforSurfaceMountApplicationsDesignedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers.
FeaturesLeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuffix)StraightLeadVersioninPlasticSleeves("1"Suffix)ElectricallySimilartoPopularD44H/D45HSeriesLowCollectorEmitterSaturationVoltageFastSwitchingSpeedsComplementaryPairsSimplifiesDesignsEpoxyMeetsUL94V0@0.
125inNJVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AECQ101QualifiedandPPAPCapableTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSCompliantMAXIMUMRATINGS(TA=25_C,commonforNPNandPNP,minussign,"",forPNPomitted,unlessotherwisenoted)RatingSymbolMaxUnitCollectorEmitterVoltageVCEO80VdcEmitterBaseVoltageVEB5VdcCollectorCurrentContinuousIC8AdcCollectorCurrentPeakICM16AdcTotalPowerDissipation@TC=25°CDerateabove25°CPD200.
16WW/°CTotalPowerDissipation(Note1)@TA=25°CDerateabove25°CPD1.
750.
014WW/°COperatingandStorageJunctionTemperatureRangeTJ,Tstg55to+150°CESDHumanBodyModelHBM3BVESDMachineModelMMCVStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
Theseratingsareapplicablewhensurfacemountedontheminimumpadsizesrecommended.
SILICONPOWERTRANSISTORS8AMPERES80VOLTS,20WATTSIPAKCASE369DSTYLE1DPAKCASE369CSTYLE1MARKINGDIAGRAMSA=AssemblyLocationY=YearWW=WorkWeekJ4xH11=DeviceCodex=4or5G=PbFreePackage1234AYWWJ4xH11GSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage7ofthisdatasheet.
ORDERINGINFORMATION1234AYWWJ4xH11Gwww.
onsemi.
comIPAKDPAKCOMPLEMENTARY1BASE3EMITTERCOLLECTOR2,41BASE3EMITTERCOLLECTOR2,4DPAKCASE369GSTYLE11234MJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com2THERMALCHARACTERISTICSCharacteristicSymbolMaxUnitThermalResistance,JunctiontoCaseRqJC6.
25°C/WThermalResistance,JunctiontoAmbient(Note2)RqJA71.
4°C/WLeadTemperatureforSolderingTL260°C2.
Theseratingsareapplicablewhensurfacemountedontheminimumpadsizesrecommended.
ELECTRICALCHARACTERISTICS(TA=25_C,commonforNPNandPNP,minussign,"",forPNPomitted,unlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOFFCHARACTERISTICSCollectorEmitterSustainingVoltage(IC=30mA,IB=0)VCEO(sus)80VdcCollectorCutoffCurrent(VCE=RatedVCEO,VBE=0)ICES1.
0mAEmitterCutoffCurrent(VEB=5Vdc)IEBO1.
0mAONCHARACTERISTICSCollectorEmitterSaturationVoltage(IC=8Adc,IB=0.
4Adc)VCE(sat)1VdcBaseEmitterSaturationVoltage(IC=8Adc,IB=0.
8Adc)VBE(sat)1.
5VdcDCCurrentGain(VCE=1Vdc,IC=2Adc)(VCE=1Vdc,IC=4Adc)hFE6040DYNAMICCHARACTERISTICSCollectorCapacitance(VCB=10Vdc,ftest=1Mhz)MJD44H11MJD45H11Ccb45130pFGainBandwidthProduct(IC=0.
5Adc,VCE=10Vdc,f=20Mhz)MJD44H11MJD45H11fT8590MHzSWITCHINGTIMESDelayandRiseTimes(IC=5Adc,IB1=0.
5Adc)MJD44H11MJD45H11td+tr300135nsStorageTime(IC=5Adc,IB1=IB2=0.
5Adc)MJD44H11MJD45H11ts500500nsFallTime(IC=5Adc,IB1=IB2=0.
5Adc)MJD44H11MJD45H11tf140100nsProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
MJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com3t,TIME(ms)10.
011k0.
30.
20.
07r(t),EFFECTIVETRANSIENTTHERMALRqJC(t)=r(t)RqJCRqJC=6.
25°C/WMAXDCURVESAPPLYFORPOWERPULSETRAINSHOWNREADTIMEATt1TJ(pk)-TC=P(pk)qJC(t)P(pk)t1t2DUTYCYCLE,D=t1/t20.
01RESISTANCE(NORMALIZED)0.
7Figure1.
ThermalResponse0.
50.
10.
050.
030.
020.
020.
030.
050.
10.
20.
30.
51235102030501002003005000.
2SINGLEPULSED=0.
50.
10.
020.
010.
05IC,COLLECTORCURRENT(AMP)201VCE,COLLECTOR-EMITTERVOLTAGE(VOLTS)0.
02310020.
550.
1THERMALLIMIT@TC=25°CWIREBONDLIMIT57207010100msdc0.
050.
313105030Figure2.
MaximumForwardBiasSafeOperatingArea1ms500ms5msTherearetwolimitationsonthepowerhandlingabilityofatransistor:averagejunctiontemperatureandsecondbreakdown.
SafeoperatingareacurvesindicateICVCElimitsofthetransistorthatmustbeobservedforreliableoperation;i.
e.
,thetransistormustnotbesubjectedtogreaterdissipationthanthecurvesindicate.
ThedataofFigure2isbasedonTJ(pk)=150_C;TCisvariabledependingonconditions.
Secondbreakdownpulselimitsarevalidfordutycyclesto10%providedTJ(pk)≤150_C.
TJ(pk)maybecalculatedfromthedatainFigure1.
Athighcasetemperatures,thermallimitationswillreducethepowerthatcanbehandledtovalueslessthanthelimitationsimposedbysecondbreakdown.
2525T,TEMPERATURE(°C)050751001251502015105PD,POWERDISSIPATION(WATTS)2.
5021.
510.
5TATCFigure3.
PowerDeratingTCTASURFACEMOUNTMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com4Figure4.
MJD44H11DCCurrentGainFigure5.
MJD45H11DCCurrentGainIC,COLLECTORCURRENT(A)1010.
10.
01101001000Figure6.
MJD44H11DCCurrentGainFigure7.
MJD45H11DCCurrentGainFigure8.
MJD44H11SaturationVoltageVCE(sat)Figure9.
MJD45H11SaturationVoltageVCE(sat)IC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
0100.
10.
20.
30.
40.
60.
70.
8hFE,DCCURRENTGAINVCE(sat),COLLEMITSATURATIONVOLTAGE(V)150°C55°C25°CVCE=1VIC,COLLECTORCURRENT(A)1010.
10.
01101001000hFE,DCCURRENTGAIN150°C55°C25°CVCE=1VIC,COLLECTORCURRENT(A)1010.
10.
01101001000hFE,DCCURRENTGAIN150°C55°C25°CVCE=4VIC,COLLECTORCURRENT(A)1010.
10.
01101001000hFE,DCCURRENTGAIN150°C55°C25°CVCE=4V0.
5150°C55°C25°CIC/IB=20IC,COLLECTORCURRENT(A)1010.
10.
0100.
10.
20.
30.
40.
60.
70.
8VCE(sat),COLLEMITSATURATIONVOLTAGE(V)0.
5150°C55°C25°CIC/IB=20MJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com5Figure10.
MJD44H11SaturationVoltageVBE(sat)Figure11.
MJD45H11SaturationVoltageVBE(sat)IC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
0100.
20.
40.
60.
81.
01.
21.
4Figure12.
MJD44H11CollectorSaturationRegionFigure13.
MJD45H11CollectorSaturationRegionIB,BASECURRENT(mA)IB,BASECURRENT(mA)10,00010001001010.
100.
40.
20.
61.
01.
41.
82.
0Figure14.
MJD44H11CapacitanceFigure15.
MJD45H11CapacitanceVR,REVERSEVOLTAGE(V)1001010.
1101001000VBE(sat),BASEEMITSATURATIONVOLTAGE(V)VCE,COLLECTOREMITTERVOLTAGE(V)C,CAPACITANCE(pF)150°C55°C25°CIC/IB=201010.
10.
0100.
20.
40.
60.
81.
01.
21.
4VBE(sat),BASEEMITSATURATIONVOLTAGE(V)150°C55°C25°CIC/IB=200.
81.
21.
6TA=25°CIC=8A1AIC=3A0.
5AIC=0.
1A10,00010001001010.
100.
40.
20.
61.
01.
41.
82.
0VCE,COLLECTOREMITTERVOLTAGE(V)0.
81.
21.
6TA=25°CCobVR,REVERSEVOLTAGE(V)1001010.
1101001000C,CAPACITANCE(pF)CobIC=8A1AIC=3A0.
5AIC=0.
1AMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com6Figure16.
MJD44H11CurrentGainBandwidthProductFigure17.
MJD45H11CurrentGainBandwidthProductIC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
01101001010.
10.
0110100fTau,CURRENTGAINBANDWIDTHPRODUCTfTau,CURRENTGAINBANDWIDTHPRODUCTVCE=2VVCE=2VMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com7ORDERINGINFORMATIONDevicePackageTypePackageShippingMJD44H11GDPAK(PbFree)369C75Units/RailNJVMJD44H11GDPAK(PbFree)369C75Units/RailMJD44H111GDPAK3(PbFree)369D75Units/RailMJD44H11RLGDPAK(PbFree)369C1,800/Tape&ReelNJVMJD44H11RLG*DPAK(PbFree)369C1,800/Tape&ReelMJD44H11T4GDPAK(PbFree)369C2,500/Tape&ReelNJVMJD44H11T4G*DPAK(PbFree)369C2,500/Tape&ReelMJD44H11T5GDPAK(PbFree)369C2,500/Tape&ReelMJD45H11GDPAK(PbFree)369C75Units/RailNJVMJD45H11G*DPAK(PbFree)369C75Units/RailMJD45H111GDPAK3(PbFree)369D75Units/RailMJD45H11RLGDPAK(PbFree)369C1,800/Tape&ReelNJVMJD45H11RLG*DPAK(PbFree)369C1,800/Tape&ReelMJD45H11T4GDPAK(PbFree)369C2,500/Tape&ReelNJVMJD45H11T4G*DPAK(PbFree)369C2,500/Tape&ReelNJVMJD44H11D3T4G*DPAK(PbFree)369G2,500/Tape&ReelNJVMJD45H11D3T4G*DPAK(PbFree)369G2,500/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
*NJVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AECQ101QualifiedandPPAPCapableMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com8PACKAGEDIMENSIONSDPAK(SINGLEGAUGE)CASE369CISSUEFSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTORbDEb3L3L4b2M0.
005(0.
13)Cc2AcCZDIMMINMAXMINMAXMILLIMETERSINCHESD0.
2350.
2455.
976.
22E0.
2500.
2656.
356.
73A0.
0860.
0942.
182.
38b0.
0250.
0350.
630.
89c20.
0180.
0240.
460.
61b20.
0280.
0450.
721.
14c0.
0180.
0240.
460.
61e0.
090BSC2.
29BSCb30.
1800.
2154.
575.
46L40.
0401.
01L0.
0550.
0701.
401.
78L30.
0350.
0500.
891.
27Z0.
1553.
93NOTES:1.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:INCHES.
3.
THERMALPADCONTOUROPTIONALWITHINDI-MENSIONSb3,L3andZ.
4.
DIMENSIONSDANDEDONOTINCLUDEMOLDFLASH,PROTRUSIONS,ORBURRS.
MOLDFLASH,PROTRUSIONS,ORGATEBURRSSHALLNOTEXCEED0.
006INCHESPERSIDE.
5.
DIMENSIONSDANDEAREDETERMINEDATTHEOUTERMOSTEXTREMESOFTHEPLASTICBODY.
6.
DATUMSAANDBAREDETERMINEDATDATUMPLANEH.
7.
OPTIONALMOLDFEATURE.
12345.
800.
2282.
580.
1021.
600.
0636.
200.
2443.
000.
1186.
170.
243ǒmminchesSCALE3:1*ForadditionalinformationonourPbFreestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.
SOLDERINGFOOTPRINT*H0.
3700.
4109.
4010.
41A10.
0000.
0050.
000.
13L10.
114REF2.
90REFL20.
020BSC0.
51BSCA1HDETAILASEATINGPLANEABCL1LHL2GAUGEPLANEDETAILAROTATED90CW5eBOTTOMVIEWZBOTTOMVIEWSIDEVIEWTOPVIEWALTERNATECONSTRUCTIONSNOTE7ZMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com9PACKAGEDIMENSIONS1234VSAKTSEATINGPLANERBFGD3PLM0.
13(0.
005)TCEJHDIMMINMAXMINMAXMILLIMETERSINCHESA0.
2350.
2455.
976.
35B0.
2500.
2656.
356.
73C0.
0860.
0942.
192.
38D0.
0270.
0350.
690.
88E0.
0180.
0230.
460.
58F0.
0370.
0450.
941.
14G0.
090BSC2.
29BSCH0.
0340.
0400.
871.
01J0.
0180.
0230.
460.
58K0.
3500.
3808.
899.
65R0.
1800.
2154.
455.
45S0.
0250.
0400.
631.
01V0.
0350.
0500.
891.
27NOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:INCH.
ZZ0.
1553.
93IPAKCASE369DISSUECSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTOR0.
180BSCDPAK3,SURFACEMOUNTCASE369GISSUEODAKBRVFG2PLDIMMINMAXMINMAXMILLIMETERSINCHESA0.
2350.
2455.
976.
22B0.
2500.
2656.
356.
73C0.
0860.
0942.
192.
38D0.
0270.
0350.
690.
88E0.
0180.
0230.
460.
58F0.
0370.
0450.
941.
14G4.
58BSCH0.
0340.
0400.
871.
01J0.
0180.
0230.
460.
58K0.
1020.
1142.
602.
89R0.
1800.
2154.
575.
45V0.
0350.
0500.
891.
27Z0.
1553.
93NOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:INCH.
0.
13(0.
005)TL0.
090BSC2.
29BSCU0.
0200.
511234ECUJHTSEATINGPLANEZSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
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201PublicationOrderNumber:MJD44H11/DMJD44H11(NPN),MJD45H11(PNP)ComplementaryPowerTransistorsDPAKforSurfaceMountApplicationsDesignedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers.
FeaturesLeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuffix)StraightLeadVersioninPlasticSleeves("1"Suffix)ElectricallySimilartoPopularD44H/D45HSeriesLowCollectorEmitterSaturationVoltageFastSwitchingSpeedsComplementaryPairsSimplifiesDesignsEpoxyMeetsUL94V0@0.
125inNJVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AECQ101QualifiedandPPAPCapableTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSCompliantMAXIMUMRATINGS(TA=25_C,commonforNPNandPNP,minussign,"",forPNPomitted,unlessotherwisenoted)RatingSymbolMaxUnitCollectorEmitterVoltageVCEO80VdcEmitterBaseVoltageVEB5VdcCollectorCurrentContinuousIC8AdcCollectorCurrentPeakICM16AdcTotalPowerDissipation@TC=25°CDerateabove25°CPD200.
16WW/°CTotalPowerDissipation(Note1)@TA=25°CDerateabove25°CPD1.
750.
014WW/°COperatingandStorageJunctionTemperatureRangeTJ,Tstg55to+150°CESDHumanBodyModelHBM3BVESDMachineModelMMCVStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
Theseratingsareapplicablewhensurfacemountedontheminimumpadsizesrecommended.
SILICONPOWERTRANSISTORS8AMPERES80VOLTS,20WATTSIPAKCASE369DSTYLE1DPAKCASE369CSTYLE1MARKINGDIAGRAMSA=AssemblyLocationY=YearWW=WorkWeekJ4xH11=DeviceCodex=4or5G=PbFreePackage1234AYWWJ4xH11GSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage7ofthisdatasheet.
ORDERINGINFORMATION1234AYWWJ4xH11Gwww.
onsemi.
comIPAKDPAKCOMPLEMENTARY1BASE3EMITTERCOLLECTOR2,41BASE3EMITTERCOLLECTOR2,4DPAKCASE369GSTYLE11234MJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com2THERMALCHARACTERISTICSCharacteristicSymbolMaxUnitThermalResistance,JunctiontoCaseRqJC6.
25°C/WThermalResistance,JunctiontoAmbient(Note2)RqJA71.
4°C/WLeadTemperatureforSolderingTL260°C2.
Theseratingsareapplicablewhensurfacemountedontheminimumpadsizesrecommended.
ELECTRICALCHARACTERISTICS(TA=25_C,commonforNPNandPNP,minussign,"",forPNPomitted,unlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOFFCHARACTERISTICSCollectorEmitterSustainingVoltage(IC=30mA,IB=0)VCEO(sus)80VdcCollectorCutoffCurrent(VCE=RatedVCEO,VBE=0)ICES1.
0mAEmitterCutoffCurrent(VEB=5Vdc)IEBO1.
0mAONCHARACTERISTICSCollectorEmitterSaturationVoltage(IC=8Adc,IB=0.
4Adc)VCE(sat)1VdcBaseEmitterSaturationVoltage(IC=8Adc,IB=0.
8Adc)VBE(sat)1.
5VdcDCCurrentGain(VCE=1Vdc,IC=2Adc)(VCE=1Vdc,IC=4Adc)hFE6040DYNAMICCHARACTERISTICSCollectorCapacitance(VCB=10Vdc,ftest=1Mhz)MJD44H11MJD45H11Ccb45130pFGainBandwidthProduct(IC=0.
5Adc,VCE=10Vdc,f=20Mhz)MJD44H11MJD45H11fT8590MHzSWITCHINGTIMESDelayandRiseTimes(IC=5Adc,IB1=0.
5Adc)MJD44H11MJD45H11td+tr300135nsStorageTime(IC=5Adc,IB1=IB2=0.
5Adc)MJD44H11MJD45H11ts500500nsFallTime(IC=5Adc,IB1=IB2=0.
5Adc)MJD44H11MJD45H11tf140100nsProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
MJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com3t,TIME(ms)10.
011k0.
30.
20.
07r(t),EFFECTIVETRANSIENTTHERMALRqJC(t)=r(t)RqJCRqJC=6.
25°C/WMAXDCURVESAPPLYFORPOWERPULSETRAINSHOWNREADTIMEATt1TJ(pk)-TC=P(pk)qJC(t)P(pk)t1t2DUTYCYCLE,D=t1/t20.
01RESISTANCE(NORMALIZED)0.
7Figure1.
ThermalResponse0.
50.
10.
050.
030.
020.
020.
030.
050.
10.
20.
30.
51235102030501002003005000.
2SINGLEPULSED=0.
50.
10.
020.
010.
05IC,COLLECTORCURRENT(AMP)201VCE,COLLECTOR-EMITTERVOLTAGE(VOLTS)0.
02310020.
550.
1THERMALLIMIT@TC=25°CWIREBONDLIMIT57207010100msdc0.
050.
313105030Figure2.
MaximumForwardBiasSafeOperatingArea1ms500ms5msTherearetwolimitationsonthepowerhandlingabilityofatransistor:averagejunctiontemperatureandsecondbreakdown.
SafeoperatingareacurvesindicateICVCElimitsofthetransistorthatmustbeobservedforreliableoperation;i.
e.
,thetransistormustnotbesubjectedtogreaterdissipationthanthecurvesindicate.
ThedataofFigure2isbasedonTJ(pk)=150_C;TCisvariabledependingonconditions.
Secondbreakdownpulselimitsarevalidfordutycyclesto10%providedTJ(pk)≤150_C.
TJ(pk)maybecalculatedfromthedatainFigure1.
Athighcasetemperatures,thermallimitationswillreducethepowerthatcanbehandledtovalueslessthanthelimitationsimposedbysecondbreakdown.
2525T,TEMPERATURE(°C)050751001251502015105PD,POWERDISSIPATION(WATTS)2.
5021.
510.
5TATCFigure3.
PowerDeratingTCTASURFACEMOUNTMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com4Figure4.
MJD44H11DCCurrentGainFigure5.
MJD45H11DCCurrentGainIC,COLLECTORCURRENT(A)1010.
10.
01101001000Figure6.
MJD44H11DCCurrentGainFigure7.
MJD45H11DCCurrentGainFigure8.
MJD44H11SaturationVoltageVCE(sat)Figure9.
MJD45H11SaturationVoltageVCE(sat)IC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
0100.
10.
20.
30.
40.
60.
70.
8hFE,DCCURRENTGAINVCE(sat),COLLEMITSATURATIONVOLTAGE(V)150°C55°C25°CVCE=1VIC,COLLECTORCURRENT(A)1010.
10.
01101001000hFE,DCCURRENTGAIN150°C55°C25°CVCE=1VIC,COLLECTORCURRENT(A)1010.
10.
01101001000hFE,DCCURRENTGAIN150°C55°C25°CVCE=4VIC,COLLECTORCURRENT(A)1010.
10.
01101001000hFE,DCCURRENTGAIN150°C55°C25°CVCE=4V0.
5150°C55°C25°CIC/IB=20IC,COLLECTORCURRENT(A)1010.
10.
0100.
10.
20.
30.
40.
60.
70.
8VCE(sat),COLLEMITSATURATIONVOLTAGE(V)0.
5150°C55°C25°CIC/IB=20MJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com5Figure10.
MJD44H11SaturationVoltageVBE(sat)Figure11.
MJD45H11SaturationVoltageVBE(sat)IC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
0100.
20.
40.
60.
81.
01.
21.
4Figure12.
MJD44H11CollectorSaturationRegionFigure13.
MJD45H11CollectorSaturationRegionIB,BASECURRENT(mA)IB,BASECURRENT(mA)10,00010001001010.
100.
40.
20.
61.
01.
41.
82.
0Figure14.
MJD44H11CapacitanceFigure15.
MJD45H11CapacitanceVR,REVERSEVOLTAGE(V)1001010.
1101001000VBE(sat),BASEEMITSATURATIONVOLTAGE(V)VCE,COLLECTOREMITTERVOLTAGE(V)C,CAPACITANCE(pF)150°C55°C25°CIC/IB=201010.
10.
0100.
20.
40.
60.
81.
01.
21.
4VBE(sat),BASEEMITSATURATIONVOLTAGE(V)150°C55°C25°CIC/IB=200.
81.
21.
6TA=25°CIC=8A1AIC=3A0.
5AIC=0.
1A10,00010001001010.
100.
40.
20.
61.
01.
41.
82.
0VCE,COLLECTOREMITTERVOLTAGE(V)0.
81.
21.
6TA=25°CCobVR,REVERSEVOLTAGE(V)1001010.
1101001000C,CAPACITANCE(pF)CobIC=8A1AIC=3A0.
5AIC=0.
1AMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com6Figure16.
MJD44H11CurrentGainBandwidthProductFigure17.
MJD45H11CurrentGainBandwidthProductIC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
01101001010.
10.
0110100fTau,CURRENTGAINBANDWIDTHPRODUCTfTau,CURRENTGAINBANDWIDTHPRODUCTVCE=2VVCE=2VMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com7ORDERINGINFORMATIONDevicePackageTypePackageShippingMJD44H11GDPAK(PbFree)369C75Units/RailNJVMJD44H11GDPAK(PbFree)369C75Units/RailMJD44H111GDPAK3(PbFree)369D75Units/RailMJD44H11RLGDPAK(PbFree)369C1,800/Tape&ReelNJVMJD44H11RLG*DPAK(PbFree)369C1,800/Tape&ReelMJD44H11T4GDPAK(PbFree)369C2,500/Tape&ReelNJVMJD44H11T4G*DPAK(PbFree)369C2,500/Tape&ReelMJD44H11T5GDPAK(PbFree)369C2,500/Tape&ReelMJD45H11GDPAK(PbFree)369C75Units/RailNJVMJD45H11G*DPAK(PbFree)369C75Units/RailMJD45H111GDPAK3(PbFree)369D75Units/RailMJD45H11RLGDPAK(PbFree)369C1,800/Tape&ReelNJVMJD45H11RLG*DPAK(PbFree)369C1,800/Tape&ReelMJD45H11T4GDPAK(PbFree)369C2,500/Tape&ReelNJVMJD45H11T4G*DPAK(PbFree)369C2,500/Tape&ReelNJVMJD44H11D3T4G*DPAK(PbFree)369G2,500/Tape&ReelNJVMJD45H11D3T4G*DPAK(PbFree)369G2,500/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
*NJVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AECQ101QualifiedandPPAPCapableMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com8PACKAGEDIMENSIONSDPAK(SINGLEGAUGE)CASE369CISSUEFSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTORbDEb3L3L4b2M0.
005(0.
13)Cc2AcCZDIMMINMAXMINMAXMILLIMETERSINCHESD0.
2350.
2455.
976.
22E0.
2500.
2656.
356.
73A0.
0860.
0942.
182.
38b0.
0250.
0350.
630.
89c20.
0180.
0240.
460.
61b20.
0280.
0450.
721.
14c0.
0180.
0240.
460.
61e0.
090BSC2.
29BSCb30.
1800.
2154.
575.
46L40.
0401.
01L0.
0550.
0701.
401.
78L30.
0350.
0500.
891.
27Z0.
1553.
93NOTES:1.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:INCHES.
3.
THERMALPADCONTOUROPTIONALWITHINDI-MENSIONSb3,L3andZ.
4.
DIMENSIONSDANDEDONOTINCLUDEMOLDFLASH,PROTRUSIONS,ORBURRS.
MOLDFLASH,PROTRUSIONS,ORGATEBURRSSHALLNOTEXCEED0.
006INCHESPERSIDE.
5.
DIMENSIONSDANDEAREDETERMINEDATTHEOUTERMOSTEXTREMESOFTHEPLASTICBODY.
6.
DATUMSAANDBAREDETERMINEDATDATUMPLANEH.
7.
OPTIONALMOLDFEATURE.
12345.
800.
2282.
580.
1021.
600.
0636.
200.
2443.
000.
1186.
170.
243ǒmminchesSCALE3:1*ForadditionalinformationonourPbFreestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.
SOLDERINGFOOTPRINT*H0.
3700.
4109.
4010.
41A10.
0000.
0050.
000.
13L10.
114REF2.
90REFL20.
020BSC0.
51BSCA1HDETAILASEATINGPLANEABCL1LHL2GAUGEPLANEDETAILAROTATED90CW5eBOTTOMVIEWZBOTTOMVIEWSIDEVIEWTOPVIEWALTERNATECONSTRUCTIONSNOTE7ZMJD44H11(NPN),MJD45H11(PNP)www.
onsemi.
com9PACKAGEDIMENSIONS1234VSAKTSEATINGPLANERBFGD3PLM0.
13(0.
005)TCEJHDIMMINMAXMINMAXMILLIMETERSINCHESA0.
2350.
2455.
976.
35B0.
2500.
2656.
356.
73C0.
0860.
0942.
192.
38D0.
0270.
0350.
690.
88E0.
0180.
0230.
460.
58F0.
0370.
0450.
941.
14G0.
090BSC2.
29BSCH0.
0340.
0400.
871.
01J0.
0180.
0230.
460.
58K0.
3500.
3808.
899.
65R0.
1800.
2154.
455.
45S0.
0250.
0400.
631.
01V0.
0350.
0500.
891.
27NOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:INCH.
ZZ0.
1553.
93IPAKCASE369DISSUECSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTOR0.
180BSCDPAK3,SURFACEMOUNTCASE369GISSUEODAKBRVFG2PLDIMMINMAXMINMAXMILLIMETERSINCHESA0.
2350.
2455.
976.
22B0.
2500.
2656.
356.
73C0.
0860.
0942.
192.
38D0.
0270.
0350.
690.
88E0.
0180.
0230.
460.
58F0.
0370.
0450.
941.
14G4.
58BSCH0.
0340.
0400.
871.
01J0.
0180.
0230.
460.
58K0.
1020.
1142.
602.
89R0.
1800.
2154.
575.
45V0.
0350.
0500.
891.
27Z0.
1553.
93NOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:INCH.
0.
13(0.
005)TL0.
090BSC2.
29BSCU0.
0200.
511234ECUJHTSEATINGPLANEZSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTORLONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
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ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
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