extended19ise.com
19ise.com 时间:2021-03-20 阅读:()
2008SemiconductorComponentsIndustries,LLC.
PublicationOrderNumber:December-2017,Rev.
2FSA642/DFSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFSA642Low-Power,Three-Port,High-SpeedMIPISwitchFeaturesLowOnCapacitance:7.
0pFTypicalLowOnResistance:7.
0TypicalWide-3dbBandwidth:1GHzTypical24-LeadUMLP(2.
5x3.
4mm)Package8kVESDRating;>16kVPower/GNDESDRatingApplicationsDualCameraApplicationsforCellPhonesDualLCDApplicationsforCellPhones,DigitalCameraDisplays,andViewfindersDescriptionTheFSA642isabi-directional,low-power,high-speedanalogswitch.
Thepinoutisdesignedtoeasedifferentialsignallayoutandisconfiguredasatriple-pole,double-throwswitch(TPDT).
TheFSA642isoptimizedforswitchingbetweentwoMIPIdevices,suchascamerasorLCDdisplaysandon-boardMultimediaApplicationProcessors(MAP).
TheFSA642iscompatiblewiththerequirementsofMobileIndustryProcessorInterface(MIPI).
Thelow-capacitancedesignallowstheFSA642toswitchsignalsthatexceed500MHzinfrequency.
Superiorchannel-to-channelcrosstalkimmunityminimizesinterferenceandallowsthetransmissionofhigh-speeddifferentialsignalsandsingle-endedsignals,asdescribedbytheMIPIspecification.
OrderingInformationPartNumberTopMarkOperatingTemperatureRangePackageFSA642UMXJG-40to+85°C24-Lead,Quad,UltrathinMoldedLeadlessPackage(UMLP),2.
5x3.
4mmFigure1.
ApplicationBlockDiagramwww.
onsemi.
com2FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchPinConfigurationFigure2.
PinConfiguration(TopThroughView)PinDefinitionsPin#NameDescription1,2CLKP,CLKNClockPath(Common)3,4D1P,D1NDataPath1(Common)5,6D2P,D2NDataPath2(Common)7,24NCNoConnect(Float)8/OEOutputEnable(ActiveLow)9GNDGround10VCCPower11SELSelect(0=A,1=B)12,13DA2N,DA2PDataPath(A2)14,15DA1N,DA1PDataPath(A1)16,17CLKAN,CLKAPClockPath(A)18,19DB2N,DB2PDataPath(2B)20,21DB1P,DB1NDataPath(1B)22,23CLKBP,CLKBN,ClockPath(B)www.
onsemi.
com3FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFunctionalDiagramFigure3.
FunctionalDiagramTruthTableSEL/OEFunctionDon'tCareHIGHDisconnectLOWLOWD1,D2,CLK=DA1,DA2,CLKAHIGHLOWD1,D2,CLK=DB1,DB2,CLKB(5)D2P(6)D2N(3)D1P(4)D1N(1)CLKP(2)CLKNSwitchControlCLKAP(17)CLKAN(16)DA1P(15)DA1N(14)DA2P(13)DA2N(12)CLKBP(22)CLKBN(23)DB1P(20)DB1N(21)FSA642(10)VCC(9)GND(8)/OE(11)SELDB2P(19)DB2N(18)www.
onsemi.
com4FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchAbsoluteMaximumRatingsStressesexceedingtheabsolutemaximumratingsmaydamagethedevice.
Thedevicemaynotfunctionorbeoperableabovetherecommendedoperatingconditionsandstressingthepartstotheselevelsisnotrecommended.
Inaddition,extendedexposuretostressesabovetherecommendedoperatingconditionsmayaffectdevicereliability.
Theabsolutemaximumratingsarestressratingsonly.
SymbolParameterMin.
Max.
UnitVCCSupplyVoltage-0.
50+5.
25VVCNTRLDCInputVoltage(SEL,/OE)(1)-0.
5VCCVVSWDCSwitchI/OVoltage(1)-0.
5VCC+0.
3VIIKDCInputDiodeCurrent-50mAIOUTDCOutputCurrent50mATSTGStorageTemperature-65+150°CESDHumanBodyModel,JEDEC:JESD22-A114AllPins6.
5kVI/OtoGND8.
0PowertoGND16.
0ChargedDeviceModel,JEDEC:JESD22-C1012.
5Note:1.
Theinputandoutputnegativeratingsmaybeexceedediftheinputandoutputdiodecurrentratingsareobserved.
RecommendedOperatingConditionsTheRecommendedOperatingConditionstabledefinestheconditionsforactualdeviceoperation.
Recommendedoperatingconditionsarespecifiedtoensureoptimalperformancetothedatasheetspecifications.
ONSemiconductordoesnotrecommendexceedingthemordesigningtoAbsoluteMaximumRatings.
SymbolParameterMin.
Max.
UnitVCCSupplyVoltage2.
654.
30VVCNTRLControlInputVoltage(SEL,/OE)(2)0VCCVVSWSwitchI/OVoltage-0.
5VCC-1VTAOperatingTemperature-40+85°CNote:2.
ThecontrolinputmustbeheldHIGHorLOW;itmustnotfloat.
www.
onsemi.
com5FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchDCElectricalCharacteristicsAlltypicalvaluesareTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40to+85CUnitsMin.
Typ.
Max.
VIKClampDiodeVoltageIIN=-18mA2.
775-1.
2VIINControlInputLeakageVSW=0to4.
3V4.
3-11AVIHInputVoltageHighVIN=0toVCC2.
650to2.
7751.
3V4.
31.
7VILInputVoltageLowVIN=0toVCC2.
650to2.
7750.
5VIOZOff-StateLeakageA,B=0+0.
3VtoVCC-0.
34.
3-22AICCQuiescentSupplyCurrentVCNTRL=0orVCC,IOUT=04.
31.
0AICCTIncreaseinICCCurrentPerControlVoltageandVCCVCNTRL=1.
8V2.
7751.
5ADCElectricalCharacteristics,Low-SpeedModeAlltypicalvaluesareTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40to+85CUnitsMin.
Typ.
Max.
RONLSSwitchOnResistance(3)VSW=1.
2V,ION=-10mA,Figure42.
651014RONLSDeltaRON(4)VSW=1.
2V,ION=-10mA(Intra-pair)2.
650.
65Notes:3.
MeasuredbythevoltagedropbetweenA/BandCLK/Dnpinsattheindicatedcurrentthroughtheswitch.
4.
Guaranteedbycharacterization.
DCElectricalCharacteristics,High-SpeedModeAlltypicalvaluesareTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40to+85CUnitsMin.
Typ.
Max.
RONHSSwitchOnResistance(5)VSW=0.
4V,ION=-10mA,Figure42.
657.
09.
5RONHSDeltaRON(6)VSW=0.
4V,ION=-10mA(Intra-pair)2.
650.
65Notes:5.
MeasuredbythevoltagedropbetweenA,B,andDnpinsattheindicatedcurrentthroughtheswitch.
6.
Guaranteedbycharacterization.
www.
onsemi.
com6FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchACElectricalCharacteristicsAllvaluesareatRL=50andRS=50andalltypicalvaluesareVCC=2.
775VatTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40Cto+85CUnitsMin.
Typ.
Max.
OIRROffIsolation(7)f=100MHz,RT=50Figure142.
775-35dBXtalkNon-AdjacentChannelCrosstalk(7)f=100MHz,RT=50Figure152.
775-55dBBW-3dbBandwidth(7)CL=0pF,RT=50Figure132.
7751.
0GHztONTurn-OnTimeSEL,/OEtoOutputCL=5pF,VSW=1.
2VFigure6,Figure72.
650to2.
7752037nstOFFTurn-OffTimeSEL,/OEtoOutputCL=5pF,VSW=1.
2VFigure6,Figure72.
650to2.
7751527nstPDPropagationDelay(7)CL=5pFFigure6,Figure82.
7750.
25nstBBMBreak-Before-MakeTimeCL=5pF,VSW1=VSW2=1.
2VFigure122.
650to2.
775358nsNote:7.
Guaranteedbycharacterization.
ACElectricalCharacteristics,High-SpeedAlltypicalvaluesareVCC=2.
775VatTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsTA=-40Cto+85CUnitsMin.
Typ.
Max.
tSK(Part_Part)Channel-to-ChannelSkewAcrossMultipleParts(8,9)VSW=0.
2VdiffPP,CL=5pF4080pstSK(Chl_Chl)Channel-to-ChannelSkewWithinaSinglePart(8)VSW=0.
2VdiffPP,CL=5pF,Figure91530pstSK(Pulse)SkewofOppositeTransitionsintheSameDifferentialChannel(8)VSW=0.
2VdiffPP,CL=5pF1020psNotes:8.
Guaranteedbycharacterization.
9.
AssumesthesameVCCandtemperatureforalldevices.
CapacitanceSymbolParameterConditionsTA=-40Cto+85CUnitsMin.
Typ.
Max.
CINControlPinInputCapacitance(10)VCC=0V1.
5pFCONDn/CLK-OnCapacitance(10)VCC=2.
775V,/OE=0V,f=1MHz,at25°C,Figure116.
07.
09.
0COFFDn/CLKOffCapacitance(10)VCC=2.
775V,/OE=2.
775V,f=1MHz,Figure102.
5Note:10.
Guaranteedbycharacterization.
www.
onsemi.
com7FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchTestDiagramsFigure4.
OnResistanceFigure5.
OffLeakageFigure6.
ACTestCircuitLoadFigure7.
Turn-On/Turn-OffWaveformsFigure8.
PropagationDelay(tRtF–500ps)Figure9.
Channel-to-ChannelSkewFigure10.
ChannelOffCapacitanceFigure11.
ChannelOnCapacitanceRL,RS,andCLarefunctionsoftheapplicationenvironment(seeACTablesforspecificvalues).
CLincludestestfixtureandstraycapacitance.
RLCLDnGNDGNDRSVSelVSWGNDVOUTVOUTDA/Bnwww.
onsemi.
com8FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchTestDiagrams(Continued)Figure12.
Break-Before-MakeIntervalTimingFigure13.
BandwidthFigure14.
ChannelOffIsolationFigure15.
Non-AdjacentChannel-to-ChannelCrosstalkVcc0.
9*VoutVcc/2tBBM0VVOUTInput-VSel0.
9*VouttRISE=2.
5ns90%10%CLHSDnRLDnGNDGNDRSVSelVSW1GNDVOUTVSW2GND--RL,RS,andCLarefunctionsoftheapplicationenvironment(seeACTablesforspecificvalues).
CLincludestestfixtureandstraycapacitance.
www.
onsemi.
com9FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchPhysicalDimensionsFigure16.
24-LeadUMLPPackageProduct-SpecificDimensionsDescriptionNominalValues(mm)DescriptionNominalValues(mm)OverallHeight0.
500LeadLength(23x)0.
4PKGStandoff0.
026LeadLength,Pin1(1x)0.
5LeadThickness0.
152LeadPitch0.
4LeadWidth(24x)0.
200BodyLength(X)3.
4BodyWidth(Y)2.
5www.
onsemi.
com10FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFigure17.
TapeandReelPackingSpecification,page1www.
onsemi.
com11FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFigure18.
TapeandReelPackingSpecification,page2www.
onsemi.
com12FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchONSemiconductorandtheONSemiconductorlogoaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/Patent-Marking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONLITERATUREFULFILLMENT:LiteratureDistributionCenterforONSemiconductor19521E.
32ndPkwy,Aurora,Colorado80011USAPhone:303-675-2175or800-344-3860TollFreeUSA/CanadaFax:303-675-2176or800-344-3867TollFreeUSA/CanadaEmail:orderlit@onsemi.
comN.
AmericanTechnicalSupport:800-282-9855TollFreeUSA/Canada.
Europe,MiddleEastandAfricaTechnicalSupport:Phone:421337902910JapanCustomerFocusCenterPhone:81-3-5817-1050ONSemiconductorWebsite:www.
onsemi.
comOrderLiterature:http://www.
onsemi.
com/orderlitForadditionalinformation,pleasecontactyourlocalSalesRepresentative
PublicationOrderNumber:December-2017,Rev.
2FSA642/DFSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFSA642Low-Power,Three-Port,High-SpeedMIPISwitchFeaturesLowOnCapacitance:7.
0pFTypicalLowOnResistance:7.
0TypicalWide-3dbBandwidth:1GHzTypical24-LeadUMLP(2.
5x3.
4mm)Package8kVESDRating;>16kVPower/GNDESDRatingApplicationsDualCameraApplicationsforCellPhonesDualLCDApplicationsforCellPhones,DigitalCameraDisplays,andViewfindersDescriptionTheFSA642isabi-directional,low-power,high-speedanalogswitch.
Thepinoutisdesignedtoeasedifferentialsignallayoutandisconfiguredasatriple-pole,double-throwswitch(TPDT).
TheFSA642isoptimizedforswitchingbetweentwoMIPIdevices,suchascamerasorLCDdisplaysandon-boardMultimediaApplicationProcessors(MAP).
TheFSA642iscompatiblewiththerequirementsofMobileIndustryProcessorInterface(MIPI).
Thelow-capacitancedesignallowstheFSA642toswitchsignalsthatexceed500MHzinfrequency.
Superiorchannel-to-channelcrosstalkimmunityminimizesinterferenceandallowsthetransmissionofhigh-speeddifferentialsignalsandsingle-endedsignals,asdescribedbytheMIPIspecification.
OrderingInformationPartNumberTopMarkOperatingTemperatureRangePackageFSA642UMXJG-40to+85°C24-Lead,Quad,UltrathinMoldedLeadlessPackage(UMLP),2.
5x3.
4mmFigure1.
ApplicationBlockDiagramwww.
onsemi.
com2FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchPinConfigurationFigure2.
PinConfiguration(TopThroughView)PinDefinitionsPin#NameDescription1,2CLKP,CLKNClockPath(Common)3,4D1P,D1NDataPath1(Common)5,6D2P,D2NDataPath2(Common)7,24NCNoConnect(Float)8/OEOutputEnable(ActiveLow)9GNDGround10VCCPower11SELSelect(0=A,1=B)12,13DA2N,DA2PDataPath(A2)14,15DA1N,DA1PDataPath(A1)16,17CLKAN,CLKAPClockPath(A)18,19DB2N,DB2PDataPath(2B)20,21DB1P,DB1NDataPath(1B)22,23CLKBP,CLKBN,ClockPath(B)www.
onsemi.
com3FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFunctionalDiagramFigure3.
FunctionalDiagramTruthTableSEL/OEFunctionDon'tCareHIGHDisconnectLOWLOWD1,D2,CLK=DA1,DA2,CLKAHIGHLOWD1,D2,CLK=DB1,DB2,CLKB(5)D2P(6)D2N(3)D1P(4)D1N(1)CLKP(2)CLKNSwitchControlCLKAP(17)CLKAN(16)DA1P(15)DA1N(14)DA2P(13)DA2N(12)CLKBP(22)CLKBN(23)DB1P(20)DB1N(21)FSA642(10)VCC(9)GND(8)/OE(11)SELDB2P(19)DB2N(18)www.
onsemi.
com4FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchAbsoluteMaximumRatingsStressesexceedingtheabsolutemaximumratingsmaydamagethedevice.
Thedevicemaynotfunctionorbeoperableabovetherecommendedoperatingconditionsandstressingthepartstotheselevelsisnotrecommended.
Inaddition,extendedexposuretostressesabovetherecommendedoperatingconditionsmayaffectdevicereliability.
Theabsolutemaximumratingsarestressratingsonly.
SymbolParameterMin.
Max.
UnitVCCSupplyVoltage-0.
50+5.
25VVCNTRLDCInputVoltage(SEL,/OE)(1)-0.
5VCCVVSWDCSwitchI/OVoltage(1)-0.
5VCC+0.
3VIIKDCInputDiodeCurrent-50mAIOUTDCOutputCurrent50mATSTGStorageTemperature-65+150°CESDHumanBodyModel,JEDEC:JESD22-A114AllPins6.
5kVI/OtoGND8.
0PowertoGND16.
0ChargedDeviceModel,JEDEC:JESD22-C1012.
5Note:1.
Theinputandoutputnegativeratingsmaybeexceedediftheinputandoutputdiodecurrentratingsareobserved.
RecommendedOperatingConditionsTheRecommendedOperatingConditionstabledefinestheconditionsforactualdeviceoperation.
Recommendedoperatingconditionsarespecifiedtoensureoptimalperformancetothedatasheetspecifications.
ONSemiconductordoesnotrecommendexceedingthemordesigningtoAbsoluteMaximumRatings.
SymbolParameterMin.
Max.
UnitVCCSupplyVoltage2.
654.
30VVCNTRLControlInputVoltage(SEL,/OE)(2)0VCCVVSWSwitchI/OVoltage-0.
5VCC-1VTAOperatingTemperature-40+85°CNote:2.
ThecontrolinputmustbeheldHIGHorLOW;itmustnotfloat.
www.
onsemi.
com5FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchDCElectricalCharacteristicsAlltypicalvaluesareTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40to+85CUnitsMin.
Typ.
Max.
VIKClampDiodeVoltageIIN=-18mA2.
775-1.
2VIINControlInputLeakageVSW=0to4.
3V4.
3-11AVIHInputVoltageHighVIN=0toVCC2.
650to2.
7751.
3V4.
31.
7VILInputVoltageLowVIN=0toVCC2.
650to2.
7750.
5VIOZOff-StateLeakageA,B=0+0.
3VtoVCC-0.
34.
3-22AICCQuiescentSupplyCurrentVCNTRL=0orVCC,IOUT=04.
31.
0AICCTIncreaseinICCCurrentPerControlVoltageandVCCVCNTRL=1.
8V2.
7751.
5ADCElectricalCharacteristics,Low-SpeedModeAlltypicalvaluesareTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40to+85CUnitsMin.
Typ.
Max.
RONLSSwitchOnResistance(3)VSW=1.
2V,ION=-10mA,Figure42.
651014RONLSDeltaRON(4)VSW=1.
2V,ION=-10mA(Intra-pair)2.
650.
65Notes:3.
MeasuredbythevoltagedropbetweenA/BandCLK/Dnpinsattheindicatedcurrentthroughtheswitch.
4.
Guaranteedbycharacterization.
DCElectricalCharacteristics,High-SpeedModeAlltypicalvaluesareTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40to+85CUnitsMin.
Typ.
Max.
RONHSSwitchOnResistance(5)VSW=0.
4V,ION=-10mA,Figure42.
657.
09.
5RONHSDeltaRON(6)VSW=0.
4V,ION=-10mA(Intra-pair)2.
650.
65Notes:5.
MeasuredbythevoltagedropbetweenA,B,andDnpinsattheindicatedcurrentthroughtheswitch.
6.
Guaranteedbycharacterization.
www.
onsemi.
com6FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchACElectricalCharacteristicsAllvaluesareatRL=50andRS=50andalltypicalvaluesareVCC=2.
775VatTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsVCC(V)TA=-40Cto+85CUnitsMin.
Typ.
Max.
OIRROffIsolation(7)f=100MHz,RT=50Figure142.
775-35dBXtalkNon-AdjacentChannelCrosstalk(7)f=100MHz,RT=50Figure152.
775-55dBBW-3dbBandwidth(7)CL=0pF,RT=50Figure132.
7751.
0GHztONTurn-OnTimeSEL,/OEtoOutputCL=5pF,VSW=1.
2VFigure6,Figure72.
650to2.
7752037nstOFFTurn-OffTimeSEL,/OEtoOutputCL=5pF,VSW=1.
2VFigure6,Figure72.
650to2.
7751527nstPDPropagationDelay(7)CL=5pFFigure6,Figure82.
7750.
25nstBBMBreak-Before-MakeTimeCL=5pF,VSW1=VSW2=1.
2VFigure122.
650to2.
775358nsNote:7.
Guaranteedbycharacterization.
ACElectricalCharacteristics,High-SpeedAlltypicalvaluesareVCC=2.
775VatTA=25°Cunlessotherwisespecified.
SymbolParameterConditionsTA=-40Cto+85CUnitsMin.
Typ.
Max.
tSK(Part_Part)Channel-to-ChannelSkewAcrossMultipleParts(8,9)VSW=0.
2VdiffPP,CL=5pF4080pstSK(Chl_Chl)Channel-to-ChannelSkewWithinaSinglePart(8)VSW=0.
2VdiffPP,CL=5pF,Figure91530pstSK(Pulse)SkewofOppositeTransitionsintheSameDifferentialChannel(8)VSW=0.
2VdiffPP,CL=5pF1020psNotes:8.
Guaranteedbycharacterization.
9.
AssumesthesameVCCandtemperatureforalldevices.
CapacitanceSymbolParameterConditionsTA=-40Cto+85CUnitsMin.
Typ.
Max.
CINControlPinInputCapacitance(10)VCC=0V1.
5pFCONDn/CLK-OnCapacitance(10)VCC=2.
775V,/OE=0V,f=1MHz,at25°C,Figure116.
07.
09.
0COFFDn/CLKOffCapacitance(10)VCC=2.
775V,/OE=2.
775V,f=1MHz,Figure102.
5Note:10.
Guaranteedbycharacterization.
www.
onsemi.
com7FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchTestDiagramsFigure4.
OnResistanceFigure5.
OffLeakageFigure6.
ACTestCircuitLoadFigure7.
Turn-On/Turn-OffWaveformsFigure8.
PropagationDelay(tRtF–500ps)Figure9.
Channel-to-ChannelSkewFigure10.
ChannelOffCapacitanceFigure11.
ChannelOnCapacitanceRL,RS,andCLarefunctionsoftheapplicationenvironment(seeACTablesforspecificvalues).
CLincludestestfixtureandstraycapacitance.
RLCLDnGNDGNDRSVSelVSWGNDVOUTVOUTDA/Bnwww.
onsemi.
com8FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchTestDiagrams(Continued)Figure12.
Break-Before-MakeIntervalTimingFigure13.
BandwidthFigure14.
ChannelOffIsolationFigure15.
Non-AdjacentChannel-to-ChannelCrosstalkVcc0.
9*VoutVcc/2tBBM0VVOUTInput-VSel0.
9*VouttRISE=2.
5ns90%10%CLHSDnRLDnGNDGNDRSVSelVSW1GNDVOUTVSW2GND--RL,RS,andCLarefunctionsoftheapplicationenvironment(seeACTablesforspecificvalues).
CLincludestestfixtureandstraycapacitance.
www.
onsemi.
com9FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchPhysicalDimensionsFigure16.
24-LeadUMLPPackageProduct-SpecificDimensionsDescriptionNominalValues(mm)DescriptionNominalValues(mm)OverallHeight0.
500LeadLength(23x)0.
4PKGStandoff0.
026LeadLength,Pin1(1x)0.
5LeadThickness0.
152LeadPitch0.
4LeadWidth(24x)0.
200BodyLength(X)3.
4BodyWidth(Y)2.
5www.
onsemi.
com10FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFigure17.
TapeandReelPackingSpecification,page1www.
onsemi.
com11FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchFigure18.
TapeandReelPackingSpecification,page2www.
onsemi.
com12FSA642—Low-Power,Three-Port,High-SpeedMIPISwitchONSemiconductorandtheONSemiconductorlogoaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/Patent-Marking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONLITERATUREFULFILLMENT:LiteratureDistributionCenterforONSemiconductor19521E.
32ndPkwy,Aurora,Colorado80011USAPhone:303-675-2175or800-344-3860TollFreeUSA/CanadaFax:303-675-2176or800-344-3867TollFreeUSA/CanadaEmail:orderlit@onsemi.
comN.
AmericanTechnicalSupport:800-282-9855TollFreeUSA/Canada.
Europe,MiddleEastandAfricaTechnicalSupport:Phone:421337902910JapanCustomerFocusCenterPhone:81-3-5817-1050ONSemiconductorWebsite:www.
onsemi.
comOrderLiterature:http://www.
onsemi.
com/orderlitForadditionalinformation,pleasecontactyourlocalSalesRepresentative
- extended19ise.com相关文档
- Progress19ise.com
- grade19ise.com
- nxp19ise.com
- Yearend19ise.com
- devices19ise.com
- influence19ise.com
Virtono：圣何塞VPS七五折月付2.2欧元起,免费双倍内存
Virtono是一家成立于2014年的国外VPS主机商，提供VPS和服务器租用等产品，商家支持PayPal、信用卡、支付宝等国内外付款方式，可选数据中心共7个：罗马尼亚2个，美国3个(圣何塞、达拉斯、迈阿密)，英国和德国各1个。目前，商家针对美国圣何塞机房VPS提供75折优惠码，同时，下单后在LET回复订单号还能获得双倍内存的升级。下面以圣何塞为例，分享几款VPS主机配置信息。Cloud VPSC...
wordpress外贸企业主题 wordpress高级全行业大气外贸主题
wordpress高级全行业大气外贸主题，wordpress通用全行业高级外贸企业在线询单自适应主题建站程序，完善的外贸企业建站功能模块 + 高效通用的后台自定义设置，更实用的移动设备特色功能模块 + 更适于欧美国外用户操作体验 大气简洁的网站风格设计 + 高效优化的网站程序结构，更利于Goolge等SEO搜索优化和站点收录排名。点击进入：wordpress高级全行业大气外贸主题主题价格：￥398...
inlicloud48元/月，云主机,2核1G/200Mbps，可选安徽/上海联通/广州移动/江门移动NAT
inlicloud怎么样?inlicloud(引力主机)主要产品为国内NAT系列VPS，目前主要有：上海联通NAT(200Mbps带宽)、宿州联通NAT(200Mbps带宽)、广州移动NAT(200Mbps带宽)。根据官方的说法国内的NAT系列VPS不要求备案、不要求实名、对中转要求也不严格，但是，禁止任何形式的回国!安徽nat/上海联通/广州移动/江门移动nat云主机,2核1G/200Mbps仅...
19ise.com为你推荐
-
对对塔对对塔和魔方格那个是正宗的？安徽汽车网安徽省各地车牌号简称是按照什么顺序排的75ff.com开机出现www.ami.com是什么？怎么解决啊刘祚天还有DJ网么?百度关键词价格查询百度关键字如何设定竟价价格?lunwenjiancepaperrater论文检测准确吗同一服务器网站服务器建设：一个服务器有多个网站该如何设置？ip查询器查看自己IP的指令kb123.net股市里的STAQ、NET市场是什么？www.henhenlu.com有一个两位数，十位数字是个位数字的二分之一，将十位数字与个位数字对调，新的两位数比原来大36，这个两位数