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1.
Productprofile1.
1GeneraldescriptionStandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.
Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly.
1.
2FeaturesandbenefitsHigheroperatingpowerduetolowthermalresistanceLowconductionlossesduetolowon-stateresistanceSuitableforhighfrequencyapplicationsduetofastswitchingcharacteristics1.
3ApplicationsDC-to-DCconvertersSwitched-modepowersupplies1.
4QuickreferencedataPHP18NQ10TN-channelTrenchMOSstandardlevelFETRev.
02—16December2010ProductdatasheetTable1.
QuickreferencedataSymbolParameterConditionsMinTypMaxUnitVDSdrain-sourcevoltageTj≥25°C;Tj≤175°C--100VIDdraincurrentTmb=25°C;VGS=10V--18APtottotalpowerdissipationTmb=25°C--79WStaticcharacteristicsRDSondrain-sourceon-stateresistanceVGS=10V;ID=9A;Tj=25°C-8090mDynamiccharacteristicsQGDgate-drainchargeVGS=10V;ID=18A;VDS=80V;Tj=25°C-8-nCPHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20102of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET2.
Pinninginformation3.
OrderinginformationTable2.
PinninginformationPinSymbolDescriptionSimplifiedoutlineGraphicsymbol1GgateSOT78(TO-220AB)2Ddrain3SsourcembDmountingbase;connectedtodrain12mb3SDGmbb076Table3.
OrderinginformationTypenumberPackageNameDescriptionVersionPHP18NQ10TTO-220ABplasticsingle-endedpackage;heatsinkmounted;1mountinghole;3-leadTO-220ABSOT78PHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20103of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET4.
LimitingvaluesTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDSdrain-sourcevoltageTj≥25°C;Tj≤175°C-100VVDGRdrain-gatevoltageTj≥25°C;Tj≤175°C;RGS=20k-100VVGSgate-sourcevoltage-2020VIDdraincurrentVGS=10V;Tmb=100°C-13AVGS=10V;Tmb=25°C-18AIDMpeakdraincurrentpulsed;Tmb=25°C-72APtottotalpowerdissipationTmb=25°C-79WTstgstoragetemperature-55175°CTjjunctiontemperature-55175°CSource-draindiodeISsourcecurrentTmb=25°C-18AISMpeaksourcecurrentpulsed;Tmb=25°C-72AAvalancheruggednessEDS(AL)Snon-repetitivedrain-sourceavalancheenergyVGS=10V;Tj(init)=25°C;ID=11A;Vsup≤25V;unclamped;tp=100s;RGS=50-70mJIASnon-repetitiveavalanchecurrentVsup≤25V;VGS=10V;Tj(init)=25°C;RGS=50;unclamped-18AFig1.
NormalizedtotalpowerdissipationasafunctionofmountingbasetemperatureFig2.
Normalizedcontinuousdraincurrentasafunctionofmountingbasetemperature40602080100PD(%)0Tmb(°C)020015050100003aae62940602080100ID(%)0Tmb(°C)020015050100003aae630PHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20104of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFETTmb=25°C;IDMissinglepulseunclampedinductiveloadFig3.
Safeoperatingarea;continuousandpeakdraincurrentsasafunctionofdrain-sourcevoltageFig4.
Single-shotavalancherating;avalanchecurrentasafunctionofavalancheperiodVDS(V)110310210003aae631101102IDM(A)101RDS(on)=VDS/IDD.
C.
tp=10μs100ms1ms10ms100μs003aae643tAV(ms)103101102101101102IAS(A)10125°CTjpriortoavalanche=150°CPHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20105of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET5.
ThermalcharacteristicsTable5.
ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-mb)thermalresistancefromjunctiontomountingbase--1.
9K/WRth(j-a)thermalresistancefromjunctiontoambientinfreeair-60-K/WFig5.
Transientthermalimpedancefromjunctiontomountingbaseasafunctionofpulseduration003aae632110110Zth(j-mb)(K/W)102tp(s)1061101102105103104singlepulse0.
2D=0.
50.
1tptpTPtTδ=0.
050.
02PHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20106of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET6.
CharacteristicsTable6.
CharacteristicsSymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsV(BR)DSSdrain-sourcebreakdownvoltageID=0.
25mA;VGS=0V;Tj=-55°C89--VID=0.
25mA;VGS=0V;Tj=25°C100--VVGS(th)gate-sourcethresholdvoltageID=1mA;VDS=VGS;Tj=-55°C--6VID=1mA;VDS=VGS;Tj=175°C1--VID=1mA;VDS=VGS;Tj=25°C234VIDSSdrainleakagecurrentVDS=100V;VGS=0V;Tj=175°C--500AVDS=100V;VGS=0V;Tj=25°C-0.
0510AIGSSgateleakagecurrentVGS=10V;VDS=0V;Tj=25°C-10100nAVGS=-10V;VDS=0V;Tj=25°C-10100nARDSondrain-sourceon-stateresistanceVGS=10V;ID=9A;Tj=175°C--243mVGS=10V;ID=9A;Tj=25°C-8090mDynamiccharacteristicsQG(tot)totalgatechargeID=18A;VDS=80V;VGS=10V;Tj=25°C-21-nCQGSgate-sourcecharge-4-nCQGDgate-draincharge-8-nCCissinputcapacitanceVDS=25V;VGS=0V;f=1MHz;Tj=25°C-633-pFCossoutputcapacitance-103-pFCrssreversetransfercapacitance-61-pFtd(on)turn-ondelaytimeVDS=50V;RL=2.
7;VGS=10V;RG(ext)=5.
6;Tj=25°C-6-nstrrisetime-36-nstd(off)turn-offdelaytime-18-nstffalltime-12-nsLDinternaldraininductancemeasuredfromdrainleadtocentreofdie;Tj=25°C-4.
5-nHmeasuredfromtabtocentreofdie;Tj=25°C-3.
5-nHLSinternalsourceinductancemeasuredfromsourceleadtosourcebondpad;Tj=25°C-7.
5-nHSource-draindiodeVSDsource-drainvoltageIS=18A;VGS=0V;Tj=25°C-0.
921.
2VtrrreverserecoverytimeIS=18A;dIS/dt=-100A/s;VGS=0V;VDS=25V;Tj=25°C-55-nsQrrecoveredcharge-135-nCPHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20107of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFETTj=25°CTj=25°CFig6.
Outputcharacteristics:draincurrentasafunctionofdrain-sourcevoltage;typicalvaluesFig7.
Drain-sourceon-stateresistanceasafunctionofdraincurrent;typicalvaluesVDS>IDxRDSonVDS>IDxRDSonFig8.
Transfercharacteristics:draincurrentasafunctionofgate-sourcevoltage;typicalvaluesFig9.
Forwardtransconductanceasafunctionofdraincurrent;typicalvaluesID=1mA;VDS=VGSFig10.
Normalizeddrain-sourceon-stateresistancefactorasafunctionofjunctiontemperatureFig11.
Gate-sourcethresholdvoltageasafunctionofjunctiontemperature81241620ID(A)0VDS(V)02.
01.
60.
81.
20.
4003aae633VGS=10V5V5.
2V5.
4V6V8V4.
4V4.
8V4.
6V0.
080.
120.
040.
160.
20RDS(on)(Ω)0ID(A)020168124003aae634VGS(V)=10684.
655.
44.
85.
281241620ID(A)0VGS(V)0108462003aae635Tj=25°CTj=175°C4101428612gfs(S)0ID(A)020168124003aae636Tj=25°CTj=175°C1.
32.
12.
9RDS(on)(Ω)0.
5003aae637Tj(°C)60180100200.
53.
52.
51.
54.
5VGS(th)(V)003aae638Tj(°C)6018010020maximumtypicalminimumPHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20108of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFETTj=25°C;VDS=VGSVGS=0V;f=1MHzFig12.
Sub-thresholddraincurrentasafunctionofgate-sourcevoltageFig13.
Input,outputandreversetransfercapacitancesasafunctionofdrain-sourcevoltage;typicalvaluesTj=25°C;ID=18AVGS=0VFig14.
Gate-sourcevoltageasafunctionofgatecharge;typicalvaluesFig15.
Source(diodeforward)currentasafunctionofsource-drain(diodeforward)voltage;typicalvalues003aae639VGS(V)054231104105102103101ID(A)106maximumtypicalminimumVDS(V)101102101003aae640103102104C(pF)10CissCossCrss0128416VGS(V)003aae641QG(nC)0302010VDD=80VVDD=20V81241620IF(A)0003aae642VSDS(V)01.
20.
80.
4Tj=25°CTj=175°CPHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December20109of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET7.
PackageoutlineFig16.
PackageoutlineSOT78(TO-220AB)REFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECJEITASOT78SC-463-leadTO-220ABSOT7808-04-2308-06-13Notes1.
Leadshoulderdesignsmayvary.
2.
Dimensionincludesexcessdambar.
UNITAmm4.
74.
11.
401.
250.
90.
60.
70.
416.
015.
26.
65.
910.
39.
715.
012.
83.
302.
793.
83.
5A1DIMENSIONS(mmaretheoriginaldimensions)Plasticsingle-endedpackage;heatsinkmounted;1mountinghole;3-leadTO-220AB0510mmscalebb1(2)1.
61.
0cD1.
31.
0b2(2)D1Ee2.
54LL1(1)L2(1)max.
3.
0pq3.
02.
7Q2.
62.
2DD1qpL123L1(1)b1(2)(3*)b2(2)(2*)eeb(3*)AEA1cQL2(1)mountingbasePHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
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2010.
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ProductdatasheetRev.
02—16December201010of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET8.
RevisionhistoryTable7.
RevisionhistoryDocumentIDReleasedateDatasheetstatusChangenoticeSupersedesPHP18NQ10Tv.
220101216Productdatasheet-PHB_PHD_PHP18NQ10Tv.
1Modifications:TheformatofthisdatasheethasbeenredesignedtocomplywiththenewidentityguidelinesofNXPSemiconductors.
Legaltextshavebeenadaptedtothenewcompanynamewhereappropriate.
TypenumberPHP18NQ10TseparatedfromdatasheetPHB_PHD_PHP18NQ10Tv.
1.
PHB_PHD_PHP18NQ10Tv.
119990801Productspecification--PHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
Allrightsreserved.
ProductdatasheetRev.
02—16December201011of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFET9.
Legalinformation9.
1Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
nxp.
com.
9.
2DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
NXPSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalNXPSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenNXPSemiconductorsanditscustomer,unlessNXPSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheNXPSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
9.
3DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
InnoeventshallNXPSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,NXPSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofNXPSemiconductors.
Righttomakechanges—NXPSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanNXPSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseofNXPSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Quickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
NXPSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingNXPSemiconductorsproducts,andNXPSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheNXPSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
NXPSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingNXPSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
NXPdoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Termsandconditionsofcommercialsale—NXPSemiconductorsproductsaresoldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.
nxp.
com/profile/terms,unlessotherwiseagreedinavalidwrittenindividualagreement.
IncaseanindividualagreementisconcludedonlythetermsandconditionsoftherespectiveDocumentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
PHP18NQ10TAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPB.
V.
2010.
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ProductdatasheetRev.
02—16December201012of13NXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFETagreementshallapply.
NXPSemiconductorsherebyexpresslyobjectstoapplyingthecustomer'sgeneraltermsandconditionswithregardtothepurchaseofNXPSemiconductorsproductsbycustomer.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromnationalauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificNXPSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutNXPSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondNXPSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesNXPSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondNXPSemiconductors'standardwarrantyandNXPSemiconductors'productspecifications.
9.
4TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,GreenChip,HiPerSmart,HITAG,IC-buslogo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFAREPlus,MIFAREUltralight,MoReUse,QLPAK,SiliconTuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaandUCODE—aretrademarksofNXPB.
V.
HDRadioandHDRadiologo—aretrademarksofiBiquityDigitalCorporation.
10.
ContactinformationFormoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comNXPSemiconductorsPHP18NQ10TN-channelTrenchMOSstandardlevelFETNXPB.
V.
2010.
Allrightsreserved.
Formoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comDateofrelease:16December2010Documentidentifier:PHP18NQ10TPleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)describedherein,havebeenincludedinsection'Legalinformation'.
11.
Contents1Productprofile11.
1Generaldescription11.
2Featuresandbenefits.
11.
3Applications11.
4Quickreferencedata12Pinninginformation.
23Orderinginformation.
24Limitingvalues.
35Thermalcharacteristics56Characteristics.
67Packageoutline98Revisionhistory.
109Legalinformation.
119.
1Datasheetstatus119.
2Definitions.
119.
3Disclaimers119.
4Trademarks.
1210Contactinformation.
12MouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:NXP:PHP18NQ10T,127