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LF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013LF442QMLDualLowPowerJFETInputOperationalAmplifierCheckforSamples:LF442QML1FEATURESDESCRIPTIONTheLF442duallowpoweroperationalamplifier21/10SupplyCurrentofaLM1458:400μA(Max)providesmanyofthesameACcharacteristicsastheLowInputBiasCurrent:50pA(Typ)industrystandardLM1458whilegreatlyimprovingtheLowInputOffsetVoltage:1mV(Typ)DCcharacteristicsoftheLM1458.
Theamplifierhasthesamebandwidth,slewrate,andgain(10kΩload)LowInputOffsetVoltageDrift:7μV/°C(Typ)astheLM1458andonlydrawsonetenththesupplyHighGainBandwidth:1MHz(Typ)currentoftheLM1458.
InadditionthewellmatchedHighSlewRate:1V/μs(Typ)highvoltageJFETinputdevicesoftheLF442reducetheinputbiasandoffsetcurrentsbyafactorofLowNoiseVoltageforLowPower:35nV/√Hz10,000overtheLM1458.
Acombinationofcareful(Typ)layoutdesignandinternaltrimmingensuresverylowLowInputNoiseCurrent:0.
01pA/√Hz(Typ)inputoffsetvoltageandvoltagedrift.
TheLF442alsoHighInputImpedance:1012Ωhasaverylowequivalentinputnoisevoltageforalowpoweramplifier.
TheLF442ispincompatiblewiththeLM1458allowinganimmediate10timesreductioninpowerdraininmanyapplications.
TheLF442shouldbeusedwherelowpowerdissipationandgoodelectricalcharacteristicsarethemajorconsiderations.
TypicalConnectionConnectionDiagramPin4connectedtocaseFigure1.
TopViewTO-99PackageSeePackageNumberLMC1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2Alltrademarksarethepropertyoftheirrespectiveowners.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2010–2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
LF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comSimplifiedSchematicFigure2.
1/2DualDetailedSchematicFigure3.
1/2DualThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
2SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013AbsoluteMaximumRatings(1)SupplyVoltage±18VDifferentialInputVoltage±30VInputVoltageRange(2)±15VOutputShortCircuitDuration(3)ContinuousMaximumPowerDissipation(4)900mWTJmax150°CStillAir161°C/WθJAThermalResistance500LF/MinAirflow87°C/WθJC33°C/WOperatingTemperatureRange55°C≤TA≤125°CStorageTemperatureRange65°C≤TA≤150°CLeadTemperature(Soldering,10sec.
)260°CESDTolerance(5)500V(1)AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.
OperatingRatingsindicateconditionsforwhichthedeviceisfunctional,butdonotensurespecificperformancelimits.
Forensuredspecificationsandtestconditions,seetheElectricalCharacteristics.
Theensuredspecificationsapplyonlyforthetestconditionslisted.
Someperformancecharacteristicsmaydegradewhenthedeviceisnotoperatedunderthelistedtestconditions.
(2)Unlessotherwisespecifiedtheabsolutemaximumnegativeinputvoltageisequaltothenegativepowersupplyvoltage.
(3)Anyoftheamplifieroutputscanbeshortedtogroundindefinitely,however,morethanoneshouldnotbesimultaneouslyshortedasthemaximumjunctiontemperaturewillbeexceeded.
(4)ThemaximumpowerdissipationmustbederatedatelevatedtemperaturesandisdictatedbyTJmax(maximumjunctiontemperature),θJA(packagejunctiontoambientthermalresistance),andTA(ambienttemperature).
ThemaximumallowablepowerdissipationatanytemperatureisPDmax=(TJmax-TA)/θJAorthenumbergivenintheAbsoluteMaximumRatings,whicheverislower.
(5)HumanBodyModel,100pFdischargedthrough1.
5KQualityConformanceInspectionTable1.
Mil-Std-883,Method5005-GroupASubgroupDescriptionTemp(°C)1Statictestsat+252Statictestsat+1253Statictestsat-554Dynamictestsat+255Dynamictestsat+1256Dynamictestsat-557Functionaltestsat+258AFunctionaltestsat+1258BFunctionaltestsat-559Switchingtestsat+2510Switchingtestsat+12511Switchingtestsat-5512Settlingtimeat+2513Settlingtimeat+12514Settlingtimeat-55Copyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback3ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comLF442ElectricalCharacteristicsDCParametersThefollowingconditionsapply,unlessotherwisespecified.
VS=±15V,VCM=0V,RS=0Sub-SymbolParameterConditionsNotesMinMaxUnitgroupsICCSupplyCurrent500A1,2,3-5.
05.
0mV1VIOInputOffsetVoltageRS=10K-7.
57.
5mV2,30.
1nA1±IIBInputBiasCurrent20nA2-0.
050.
05nA1IIOInputOffsetCurrent-1010nA2CMRRCommonModeRejectionRatioVCM=±11V,RS=10K70dB1,2,3VS+=+15Vto+6V,70dB1,2,3VS-=-15VPSRRPowerSupplyRejectionRatioVS-=-15Vto-6V,70dB1,2,3VS+=+15VVO=0Vto+10V,25V/mV4+AVSLargeSignalVoltageGainSee(1)RL=10K15V/mV5,6VO=0Vto-10V,25V/mV4-AVSLargeSignalVoltageGainSee(1)RL=10K15V/mV5,6VO+OutputVoltageSwingVI=±11V,RL=10K12V4,5,6VO-OutputVoltageSwingVI=±11V,RL=10K-12V4,5,6InputCommonModeVoltageVCMSee(2)11-11V4,5,6Range(1)V/mVinunitscolumnisequivalenttoKindatalog.
(2)Parametertestedgo-no-goonly,specifiedbyCMRRtest.
.
ACParametersThefollowingconditionsapply,unlessotherwisespecified.
VS=±15V,VCM=0V,RS=0Sub-SymbolParameterConditionsNotesMinMaxUnitgroupsVO=-5Vto+5V,AV=1,SR+SlewRate0.
6V/S7RL=2K,CL-100pFVO=+5Vto-5V,SR-SlewRateAV=1,RL=2K,0.
6V/S7CL-100pFGBWGainBandWidthVI=50mV,=20KHz0.
6MHz74SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013TypicalPerformanceCharacteristicsInputBiasCurrentInputBiasCurrentFigure4.
Figure5.
PositiveCommon-ModeSupplyCurrentInputVoltageLimitFigure6.
Figure7.
NegativeCommon-ModeInputVoltageLimitPositiveCurrentLimitFigure8.
Figure9.
Copyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comTypicalPerformanceCharacteristics(continued)NegativeCurrentLimitOutputVoltageSwingFigure10.
Figure11.
OutputVoltageSwingGainBandwidthFigure12.
Figure13.
BodePlotSlewRateFigure14.
Figure15.
6SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013TypicalPerformanceCharacteristics(continued)UndistortedOutputVoltageDistortionvsFrequencySwingFigure16.
Figure17.
OpenLoopFrequencyCommon-ModeRejectionResponseRatioFigure18.
Figure19.
PowerSupplyRejectionEquivalentInputNoiseRatioVoltageFigure20.
Figure21.
Copyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback7ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comTypicalPerformanceCharacteristics(continued)OpenLoopVoltageGainOutputImpedanceFigure22.
Figure23.
InverterSettlingTimeFigure24.
8SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013PulseResponseRL=10kΩ,CL=10pFSmallSignalInvertingSmallSignalNon-InvertingLargeSignalInvertingLargeSignalNon-InvertingCopyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback9ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comAPPLICATIONHINTSThisdeviceisaduallowpoweropampwithinternallytrimmedinputoffsetvoltagesandJFETinputdevices(BI-FETII).
TheseJFETshavelargereversebreakdownvoltagesfromgatetosourceanddraineliminatingtheneedforclampsacrosstheinputs.
Therefore,largedifferentialinputvoltagescaneasilybeaccommodatedwithoutalargeincreaseininputcurrent.
Themaximumdifferentialinputvoltageisindependentofthesupplyvoltages.
However,neitheroftheinputvoltagesshouldbeallowedtoexceedthenegativesupplyasthiswillcauselargecurrentstoflowwhichcanresultinadestroyedunit.
Exceedingthenegativecommon-modelimitoneitherinputwillforcetheoutputtoahighstate,potentiallycausingareversalofphasetotheoutput.
Exceedingthenegativecommon-modelimitonbothinputswillforcetheamplifieroutputtoahighstate.
Inneithercasedoesalatchoccursinceraisingtheinputbackwithinthecommon-moderangeagainputstheinputstageandthustheamplifierinanormaloperatingmode.
Exceedingthepositivecommon-modelimitonasingleinputwillnotchangethephaseoftheoutput;however,ifbothinputsexceedthelimit,theoutputoftheamplifierwillbeforcedtoahighstate.
Theamplifierswilloperatewithacommon-modeinputvoltageequaltothepositivesupply;however,thegainbandwidthandslewratemaybedecreasedinthiscondition.
Whenthenegativecommon-modevoltageswingstowithin3Vofthenegativesupply,anincreaseininputoffsetvoltagemayoccur.
Eachamplifierisindividuallybiasedtoallownormalcircuitoperationwithpowersuppliesof±3.
0V.
Supplyvoltageslessthanthesemaydegradethecommon-moderejectionandrestricttheoutputvoltageswing.
Theamplifierswilldrivea10kΩloadresistanceto±10Voverthefulltemperaturerange.
PrecautionsshouldbetakentoensurethatthepowersupplyfortheintegratedcircuitneverbecomesreversedinpolarityorthattheunitisnotinadvertentlyinstalledbackwardsinasocketasanunlimitedcurrentsurgethroughtheresultingforwarddiodewithintheICcouldcausefusingoftheinternalconductorsandresultinadestroyedunit.
Aswithmostamplifiers,careshouldbetakenwithleaddress,componentplacementandsupplydecouplinginordertoensurestability.
Forexample,resistorsfromtheoutputtoaninputshouldbeplacedwiththebodyclosetotheinputtominimize"pick-up"andmaximizethefrequencyofthefeedbackpolebyminimizingthecapacitancefromtheinputtoground.
Afeedbackpoleiscreatedwhenthefeedbackaroundanyamplifierisresistive.
Theparallelresistanceandcapacitancefromtheinputofthedevice(usuallytheinvertinginput)toACgroundsetthefrequencyofthepole.
Inmanyinstancesthefrequencyofthispoleismuchgreaterthantheexpected3dBfrequencyoftheclosedloopgainandconsequentythereisnegligibleeffectonstabilitymargin.
However,ifthefeedbackpoleislessthanapproximately6timestheexpected3dBfrequencyaleadcapacitorshouldbeplacedfromtheoutputtotheinputoftheopamp.
ThevalueoftheaddedcapacitorshouldbesuchthattheRCtimeconstantofthiscapacitorandtheresistanceitparallelsisgreaterthanorequaltotheoriginalfeedbackpoletimeconstant.
10SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013TypicalApplicationsFigure25.
BatteryPoweredStripChartPreamplifierRunsfrom9vbatteries(±9Vsupplies)FullysettablegainandtimeconstantBatterypoweredsupplyallowsdirectplug-ininterfacetostripchartrecorderwithoutcommon-modeproblemsFigure26.
"NoFET"LowPowerV→FConverterTrim1Mpotfor1kHzfull-scaleoutput15mWpowerdrainNointegratorresetFETrequiredMountD1andD2incloseproximity1%linearityto1kHzCopyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback11ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comFigure27.
HighEfficiencyCrystalOvenControllerTcontrol=75°CA1'soutputrepresentstheamplifieddifferencebetweentheLM335temperaturesensorandthecrystaloven'stemperatureA2,afreerunningdutycyclemodulator,drivestheLM395tocompleteaservoloopSwitchedmodeoperationyieldshighefficiency1%metalfilmresistorFigure28.
ConventionalLogAmplifierRT=TelLabstypeQ81Trim5kfor10μAthroughthe5k–120kcombination*1%filmresistor12SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013Figure29.
UnconventionalLogAmplifierQ1,Q2,Q3areincludedonLM389amplifierchipwhichistemperature-stabilizedbytheLM389andQ2-Q3,whichactasaheater-sensorpair.
Q1,theloggingtransistor,isthusimmunetoambienttemperaturevariationandrequiresnotemperaturecompensationatall.
Table2.
RevisionHistoryDateReleasedRevisionSectionChanges12/16/2010ANewreleasetocorporateformat1MDSdatasheetconvertedintoonecorporatedatasheetformat.
MNLF442M-XRev0A1willbearchived.
03/26/2013AAllSectionsChangedlayoutofNationalDataSheettoTIformatCopyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback13ProductFolderLinks:LF442QMLPACKAGEOPTIONADDENDUMwww.
ti.
com21-Nov-2016Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)Samples5962-9763301QGANRNDTO-99LMC820TBDCallTICallTI-55to125LF442MH/8835962-9763301QGAQACO5962-9763301QGAQ>TLF442MH/883NRNDTO-99LMC820TBDCallTICallTI-55to125LF442MH/8835962-9763301QGAQACO5962-9763301QGAQ>T(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
ti.
com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Lead/BallFinish-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Lead/BallFinishvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
PACKAGEOPTIONADDENDUMwww.
ti.
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ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013LF442QMLDualLowPowerJFETInputOperationalAmplifierCheckforSamples:LF442QML1FEATURESDESCRIPTIONTheLF442duallowpoweroperationalamplifier21/10SupplyCurrentofaLM1458:400μA(Max)providesmanyofthesameACcharacteristicsastheLowInputBiasCurrent:50pA(Typ)industrystandardLM1458whilegreatlyimprovingtheLowInputOffsetVoltage:1mV(Typ)DCcharacteristicsoftheLM1458.
Theamplifierhasthesamebandwidth,slewrate,andgain(10kΩload)LowInputOffsetVoltageDrift:7μV/°C(Typ)astheLM1458andonlydrawsonetenththesupplyHighGainBandwidth:1MHz(Typ)currentoftheLM1458.
InadditionthewellmatchedHighSlewRate:1V/μs(Typ)highvoltageJFETinputdevicesoftheLF442reducetheinputbiasandoffsetcurrentsbyafactorofLowNoiseVoltageforLowPower:35nV/√Hz10,000overtheLM1458.
Acombinationofcareful(Typ)layoutdesignandinternaltrimmingensuresverylowLowInputNoiseCurrent:0.
01pA/√Hz(Typ)inputoffsetvoltageandvoltagedrift.
TheLF442alsoHighInputImpedance:1012Ωhasaverylowequivalentinputnoisevoltageforalowpoweramplifier.
TheLF442ispincompatiblewiththeLM1458allowinganimmediate10timesreductioninpowerdraininmanyapplications.
TheLF442shouldbeusedwherelowpowerdissipationandgoodelectricalcharacteristicsarethemajorconsiderations.
TypicalConnectionConnectionDiagramPin4connectedtocaseFigure1.
TopViewTO-99PackageSeePackageNumberLMC1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2Alltrademarksarethepropertyoftheirrespectiveowners.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2010–2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
LF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comSimplifiedSchematicFigure2.
1/2DualDetailedSchematicFigure3.
1/2DualThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
2SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013AbsoluteMaximumRatings(1)SupplyVoltage±18VDifferentialInputVoltage±30VInputVoltageRange(2)±15VOutputShortCircuitDuration(3)ContinuousMaximumPowerDissipation(4)900mWTJmax150°CStillAir161°C/WθJAThermalResistance500LF/MinAirflow87°C/WθJC33°C/WOperatingTemperatureRange55°C≤TA≤125°CStorageTemperatureRange65°C≤TA≤150°CLeadTemperature(Soldering,10sec.
)260°CESDTolerance(5)500V(1)AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.
OperatingRatingsindicateconditionsforwhichthedeviceisfunctional,butdonotensurespecificperformancelimits.
Forensuredspecificationsandtestconditions,seetheElectricalCharacteristics.
Theensuredspecificationsapplyonlyforthetestconditionslisted.
Someperformancecharacteristicsmaydegradewhenthedeviceisnotoperatedunderthelistedtestconditions.
(2)Unlessotherwisespecifiedtheabsolutemaximumnegativeinputvoltageisequaltothenegativepowersupplyvoltage.
(3)Anyoftheamplifieroutputscanbeshortedtogroundindefinitely,however,morethanoneshouldnotbesimultaneouslyshortedasthemaximumjunctiontemperaturewillbeexceeded.
(4)ThemaximumpowerdissipationmustbederatedatelevatedtemperaturesandisdictatedbyTJmax(maximumjunctiontemperature),θJA(packagejunctiontoambientthermalresistance),andTA(ambienttemperature).
ThemaximumallowablepowerdissipationatanytemperatureisPDmax=(TJmax-TA)/θJAorthenumbergivenintheAbsoluteMaximumRatings,whicheverislower.
(5)HumanBodyModel,100pFdischargedthrough1.
5KQualityConformanceInspectionTable1.
Mil-Std-883,Method5005-GroupASubgroupDescriptionTemp(°C)1Statictestsat+252Statictestsat+1253Statictestsat-554Dynamictestsat+255Dynamictestsat+1256Dynamictestsat-557Functionaltestsat+258AFunctionaltestsat+1258BFunctionaltestsat-559Switchingtestsat+2510Switchingtestsat+12511Switchingtestsat-5512Settlingtimeat+2513Settlingtimeat+12514Settlingtimeat-55Copyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback3ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comLF442ElectricalCharacteristicsDCParametersThefollowingconditionsapply,unlessotherwisespecified.
VS=±15V,VCM=0V,RS=0Sub-SymbolParameterConditionsNotesMinMaxUnitgroupsICCSupplyCurrent500A1,2,3-5.
05.
0mV1VIOInputOffsetVoltageRS=10K-7.
57.
5mV2,30.
1nA1±IIBInputBiasCurrent20nA2-0.
050.
05nA1IIOInputOffsetCurrent-1010nA2CMRRCommonModeRejectionRatioVCM=±11V,RS=10K70dB1,2,3VS+=+15Vto+6V,70dB1,2,3VS-=-15VPSRRPowerSupplyRejectionRatioVS-=-15Vto-6V,70dB1,2,3VS+=+15VVO=0Vto+10V,25V/mV4+AVSLargeSignalVoltageGainSee(1)RL=10K15V/mV5,6VO=0Vto-10V,25V/mV4-AVSLargeSignalVoltageGainSee(1)RL=10K15V/mV5,6VO+OutputVoltageSwingVI=±11V,RL=10K12V4,5,6VO-OutputVoltageSwingVI=±11V,RL=10K-12V4,5,6InputCommonModeVoltageVCMSee(2)11-11V4,5,6Range(1)V/mVinunitscolumnisequivalenttoKindatalog.
(2)Parametertestedgo-no-goonly,specifiedbyCMRRtest.
.
ACParametersThefollowingconditionsapply,unlessotherwisespecified.
VS=±15V,VCM=0V,RS=0Sub-SymbolParameterConditionsNotesMinMaxUnitgroupsVO=-5Vto+5V,AV=1,SR+SlewRate0.
6V/S7RL=2K,CL-100pFVO=+5Vto-5V,SR-SlewRateAV=1,RL=2K,0.
6V/S7CL-100pFGBWGainBandWidthVI=50mV,=20KHz0.
6MHz74SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013TypicalPerformanceCharacteristicsInputBiasCurrentInputBiasCurrentFigure4.
Figure5.
PositiveCommon-ModeSupplyCurrentInputVoltageLimitFigure6.
Figure7.
NegativeCommon-ModeInputVoltageLimitPositiveCurrentLimitFigure8.
Figure9.
Copyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comTypicalPerformanceCharacteristics(continued)NegativeCurrentLimitOutputVoltageSwingFigure10.
Figure11.
OutputVoltageSwingGainBandwidthFigure12.
Figure13.
BodePlotSlewRateFigure14.
Figure15.
6SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013TypicalPerformanceCharacteristics(continued)UndistortedOutputVoltageDistortionvsFrequencySwingFigure16.
Figure17.
OpenLoopFrequencyCommon-ModeRejectionResponseRatioFigure18.
Figure19.
PowerSupplyRejectionEquivalentInputNoiseRatioVoltageFigure20.
Figure21.
Copyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback7ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comTypicalPerformanceCharacteristics(continued)OpenLoopVoltageGainOutputImpedanceFigure22.
Figure23.
InverterSettlingTimeFigure24.
8SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013PulseResponseRL=10kΩ,CL=10pFSmallSignalInvertingSmallSignalNon-InvertingLargeSignalInvertingLargeSignalNon-InvertingCopyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback9ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comAPPLICATIONHINTSThisdeviceisaduallowpoweropampwithinternallytrimmedinputoffsetvoltagesandJFETinputdevices(BI-FETII).
TheseJFETshavelargereversebreakdownvoltagesfromgatetosourceanddraineliminatingtheneedforclampsacrosstheinputs.
Therefore,largedifferentialinputvoltagescaneasilybeaccommodatedwithoutalargeincreaseininputcurrent.
Themaximumdifferentialinputvoltageisindependentofthesupplyvoltages.
However,neitheroftheinputvoltagesshouldbeallowedtoexceedthenegativesupplyasthiswillcauselargecurrentstoflowwhichcanresultinadestroyedunit.
Exceedingthenegativecommon-modelimitoneitherinputwillforcetheoutputtoahighstate,potentiallycausingareversalofphasetotheoutput.
Exceedingthenegativecommon-modelimitonbothinputswillforcetheamplifieroutputtoahighstate.
Inneithercasedoesalatchoccursinceraisingtheinputbackwithinthecommon-moderangeagainputstheinputstageandthustheamplifierinanormaloperatingmode.
Exceedingthepositivecommon-modelimitonasingleinputwillnotchangethephaseoftheoutput;however,ifbothinputsexceedthelimit,theoutputoftheamplifierwillbeforcedtoahighstate.
Theamplifierswilloperatewithacommon-modeinputvoltageequaltothepositivesupply;however,thegainbandwidthandslewratemaybedecreasedinthiscondition.
Whenthenegativecommon-modevoltageswingstowithin3Vofthenegativesupply,anincreaseininputoffsetvoltagemayoccur.
Eachamplifierisindividuallybiasedtoallownormalcircuitoperationwithpowersuppliesof±3.
0V.
Supplyvoltageslessthanthesemaydegradethecommon-moderejectionandrestricttheoutputvoltageswing.
Theamplifierswilldrivea10kΩloadresistanceto±10Voverthefulltemperaturerange.
PrecautionsshouldbetakentoensurethatthepowersupplyfortheintegratedcircuitneverbecomesreversedinpolarityorthattheunitisnotinadvertentlyinstalledbackwardsinasocketasanunlimitedcurrentsurgethroughtheresultingforwarddiodewithintheICcouldcausefusingoftheinternalconductorsandresultinadestroyedunit.
Aswithmostamplifiers,careshouldbetakenwithleaddress,componentplacementandsupplydecouplinginordertoensurestability.
Forexample,resistorsfromtheoutputtoaninputshouldbeplacedwiththebodyclosetotheinputtominimize"pick-up"andmaximizethefrequencyofthefeedbackpolebyminimizingthecapacitancefromtheinputtoground.
Afeedbackpoleiscreatedwhenthefeedbackaroundanyamplifierisresistive.
Theparallelresistanceandcapacitancefromtheinputofthedevice(usuallytheinvertinginput)toACgroundsetthefrequencyofthepole.
Inmanyinstancesthefrequencyofthispoleismuchgreaterthantheexpected3dBfrequencyoftheclosedloopgainandconsequentythereisnegligibleeffectonstabilitymargin.
However,ifthefeedbackpoleislessthanapproximately6timestheexpected3dBfrequencyaleadcapacitorshouldbeplacedfromtheoutputtotheinputoftheopamp.
ThevalueoftheaddedcapacitorshouldbesuchthattheRCtimeconstantofthiscapacitorandtheresistanceitparallelsisgreaterthanorequaltotheoriginalfeedbackpoletimeconstant.
10SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013TypicalApplicationsFigure25.
BatteryPoweredStripChartPreamplifierRunsfrom9vbatteries(±9Vsupplies)FullysettablegainandtimeconstantBatterypoweredsupplyallowsdirectplug-ininterfacetostripchartrecorderwithoutcommon-modeproblemsFigure26.
"NoFET"LowPowerV→FConverterTrim1Mpotfor1kHzfull-scaleoutput15mWpowerdrainNointegratorresetFETrequiredMountD1andD2incloseproximity1%linearityto1kHzCopyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback11ProductFolderLinks:LF442QMLLF442QMLSNOSAO8A–DECEMBER2010–REVISEDMARCH2013www.
ti.
comFigure27.
HighEfficiencyCrystalOvenControllerTcontrol=75°CA1'soutputrepresentstheamplifieddifferencebetweentheLM335temperaturesensorandthecrystaloven'stemperatureA2,afreerunningdutycyclemodulator,drivestheLM395tocompleteaservoloopSwitchedmodeoperationyieldshighefficiency1%metalfilmresistorFigure28.
ConventionalLogAmplifierRT=TelLabstypeQ81Trim5kfor10μAthroughthe5k–120kcombination*1%filmresistor12SubmitDocumentationFeedbackCopyright2010–2013,TexasInstrumentsIncorporatedProductFolderLinks:LF442QMLLF442QMLwww.
ti.
comSNOSAO8A–DECEMBER2010–REVISEDMARCH2013Figure29.
UnconventionalLogAmplifierQ1,Q2,Q3areincludedonLM389amplifierchipwhichistemperature-stabilizedbytheLM389andQ2-Q3,whichactasaheater-sensorpair.
Q1,theloggingtransistor,isthusimmunetoambienttemperaturevariationandrequiresnotemperaturecompensationatall.
Table2.
RevisionHistoryDateReleasedRevisionSectionChanges12/16/2010ANewreleasetocorporateformat1MDSdatasheetconvertedintoonecorporatedatasheetformat.
MNLF442M-XRev0A1willbearchived.
03/26/2013AAllSectionsChangedlayoutofNationalDataSheettoTIformatCopyright2010–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback13ProductFolderLinks:LF442QMLPACKAGEOPTIONADDENDUMwww.
ti.
com21-Nov-2016Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)Samples5962-9763301QGANRNDTO-99LMC820TBDCallTICallTI-55to125LF442MH/8835962-9763301QGAQACO5962-9763301QGAQ>TLF442MH/883NRNDTO-99LMC820TBDCallTICallTI-55to125LF442MH/8835962-9763301QGAQACO5962-9763301QGAQ>T(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
ti.
com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Lead/BallFinish-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Lead/BallFinishvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
PACKAGEOPTIONADDENDUMwww.
ti.
com21-Nov-2016Addendum-Page2ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.
TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.
IMPORTANTNOTICETexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,enhancements,improvementsandotherchangestoitssemiconductorproductsandservicesperJESD46,latestissue,andtodiscontinueanyproductorserviceperJESD48,latestissue.
Buyersshouldobtainthelatestrelevantinformationbeforeplacingordersandshouldverifythatsuchinformationiscurrentandcomplete.
Allsemiconductorproducts(alsoreferredtohereinas"components")aresoldsubjecttoTI'stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.
TIwarrantsperformanceofitscomponentstothespecificationsapplicableatthetimeofsale,inaccordancewiththewarrantyinTI'stermsandconditionsofsaleofsemiconductorproducts.
TestingandotherqualitycontroltechniquesareusedtotheextentTIdeemsnecessarytosupportthiswarranty.
Exceptwheremandatedbyapplicablelaw,testingofallparametersofeachcomponentisnotnecessarilyperformed.
TIassumesnoliabilityforapplicationsassistanceorthedesignofBuyers'products.
BuyersareresponsiblefortheirproductsandapplicationsusingTIcomponents.
TominimizetherisksassociatedwithBuyers'productsandapplications,Buyersshouldprovideadequatedesignandoperatingsafeguards.
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Buyerrepresentsandagreesthatithasallthenecessaryexpertisetocreateandimplementsafeguardswhichanticipatedangerousconsequencesoffailures,monitorfailuresandtheirconsequences,lessenthelikelihoodoffailuresthatmightcauseharmandtakeappropriateremedialactions.
BuyerwillfullyindemnifyTIanditsrepresentativesagainstanydamagesarisingoutoftheuseofanyTIcomponentsinsafety-criticalapplications.
Insomecases,TIcomponentsmaybepromotedspecificallytofacilitatesafety-relatedapplications.
Withsuchcomponents,TI'sgoalistohelpenablecustomerstodesignandcreatetheirownend-productsolutionsthatmeetapplicablefunctionalsafetystandardsandrequirements.
Nonetheless,suchcomponentsaresubjecttotheseterms.
NoTIcomponentsareauthorizedforuseinFDAClassIII(orsimilarlife-criticalmedicalequipment)unlessauthorizedofficersofthepartieshaveexecutedaspecialagreementspecificallygoverningsuchuse.
OnlythoseTIcomponentswhichTIhasspecificallydesignatedasmilitarygradeor"enhancedplastic"aredesignedandintendedforuseinmilitary/aerospaceapplicationsorenvironments.
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TIhasspecificallydesignatedcertaincomponentsasmeetingISO/TS16949requirements,mainlyforautomotiveuse.
Inanycaseofuseofnon-designatedproducts,TIwillnotberesponsibleforanyfailuretomeetISO/TS16949.
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